VO2 switch based submillimeter-wave phase shifters

C. Hillman, B. Ma, P. Stupar, Z. Griffith
{"title":"VO2 switch based submillimeter-wave phase shifters","authors":"C. Hillman, B. Ma, P. Stupar, Z. Griffith","doi":"10.1109/MWSYM.2017.8058787","DOIUrl":null,"url":null,"abstract":"A monolithic 3-bit phase shifter has been fabricated and demonstrates broadband and low loss performance from 220 GHz to 240 GHz. The phase shifter utilizes an ultra-low loss vanadium dioxide switch for phase state control. The design uses a low-pass π-filter networks as phase shift elements for 45, 90 and 180 degree bits. This phase shifter's mean insertion loss of 7.6 dB is 3dB lower than any other passive phase shifter we could identify in literature and comparable to the best active vector-sum devices. The RMS phase error is a competitive 6.8 degrees at 230GHz and averages only 8 dB over the band from 220 to 240 GHz. This phase shifter's complete circuit footprint is < 0.1mm2 easily fitting within (λ/2)2 ∼ 0.4 mm2 array spacing. A second topology was also demonstrated that consists of a one-port transmission line reflection phase shifter (TLPS) using a variable length, short-circuit terminated synthetic transmission line. This device demonstrates an average insertion loss of 5.2 dB and RMS phase error of 30 degrees. We can find no passive phase shifter with comparable performance or compactness to either of the devices presented here.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"64 1","pages":"1098-1101"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE MTT-S International Microwave Symposium (IMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2017.8058787","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

A monolithic 3-bit phase shifter has been fabricated and demonstrates broadband and low loss performance from 220 GHz to 240 GHz. The phase shifter utilizes an ultra-low loss vanadium dioxide switch for phase state control. The design uses a low-pass π-filter networks as phase shift elements for 45, 90 and 180 degree bits. This phase shifter's mean insertion loss of 7.6 dB is 3dB lower than any other passive phase shifter we could identify in literature and comparable to the best active vector-sum devices. The RMS phase error is a competitive 6.8 degrees at 230GHz and averages only 8 dB over the band from 220 to 240 GHz. This phase shifter's complete circuit footprint is < 0.1mm2 easily fitting within (λ/2)2 ∼ 0.4 mm2 array spacing. A second topology was also demonstrated that consists of a one-port transmission line reflection phase shifter (TLPS) using a variable length, short-circuit terminated synthetic transmission line. This device demonstrates an average insertion loss of 5.2 dB and RMS phase error of 30 degrees. We can find no passive phase shifter with comparable performance or compactness to either of the devices presented here.
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基于VO2开关的亚毫米波移相器
制作了一个单片3位移相器,并在220 GHz至240 GHz范围内展示了宽带和低损耗性能。移相器采用超低损耗二氧化钒开关进行相态控制。该设计采用低通π滤波器网络作为45度、90度和180度位的相移元件。该移相器的平均插入损耗为7.6 dB,比我们在文献中发现的任何其他无源移相器低3dB,可与最好的有源矢量和器件相媲美。在230GHz时,RMS相位误差为6.8度,在220至240 GHz频段内平均仅为8 dB。该移相器的完整电路占地面积< 0.1mm2,易于在(λ/2)2 ~ 0.4 mm2阵列间距内安装。第二种拓扑结构也被证明是由使用可变长度、短路端接合成传输线的单端口传输线反射移相器(TLPS)组成的。该器件的平均插入损耗为5.2 dB,均方根相位误差为30度。我们发现没有任何一种无源移相器的性能或紧凑性可以与本文介绍的任何一种器件相媲美。
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