{"title":"Multiple Quantum Barrier Nano-avalanche Photodiodes - Part III: Time and Frequency Responses","authors":"Somrita Ghosh, A. Acharyya","doi":"10.2174/2210681208666180813122642","DOIUrl":null,"url":null,"abstract":"\n\nThe time and frequency responses of Multiple Quantum Barrier (MQB)\nnano-scale Avalanche Photodiodes (APDs) based on Si~3C-SiC material system have been investigated\nin this final part.\n\n\n\n A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical\npulse having 850 nm wavelength incidents on the p+-side of the MQB APD structures and corresponding\ncurrent responses have been calculated by using a simulation method developed by the\nauthors.\n\n\n\nFinally the frequency responses of the devices are obtained via the Fourier transform of\nthe corresponding pulse current responses in time domain.\n\n\n\nSimulation results show that MQB nano-APDs possess significantly faster time response\nand wider frequency response as compared to the flat Si nano-APDs under similar operating\nconditions.\n","PeriodicalId":18979,"journal":{"name":"Nanoscience & Nanotechnology-Asia","volume":"56 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2019-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanoscience & Nanotechnology-Asia","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2174/2210681208666180813122642","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The time and frequency responses of Multiple Quantum Barrier (MQB)
nano-scale Avalanche Photodiodes (APDs) based on Si~3C-SiC material system have been investigated
in this final part.
A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical
pulse having 850 nm wavelength incidents on the p+-side of the MQB APD structures and corresponding
current responses have been calculated by using a simulation method developed by the
authors.
Finally the frequency responses of the devices are obtained via the Fourier transform of
the corresponding pulse current responses in time domain.
Simulation results show that MQB nano-APDs possess significantly faster time response
and wider frequency response as compared to the flat Si nano-APDs under similar operating
conditions.
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