{"title":"An Analytical Drain Current Model for Dual-material Gate Graded - channel and Dual-oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET","authors":"Hind Jaafar, A. Aouaj, A. Bouziane, B. Iñíguez","doi":"10.2174/2210681208666180813122145","DOIUrl":null,"url":null,"abstract":"\n\nA novel Dual Material Gate Graded Channel and Dual Oxide Thickness Cylindrical\nGate (DMG-GC-DOT) MOSFET is presented in this paper.\n\n\n\nAnalytical model of drain current is developed using a quasi-two-dimensional cylindrical\nform of the Poisson equation and is expressed as a function of the surface potential, which is calculated\nusing the expressions of the current density.\n\n\n\nComparison of the analytical results with 3D numerical simulations using Silvaco Atlas -\nTCAD software presents a good agreement from subthreshold to strong inversion regime and for different\nbias voltages.\n\n\n\nTwo oxide thicknesses with different permittivity can effectively improve the subthreshold\ncurrent of DMG-GC-DOT MOSFET.\n","PeriodicalId":18979,"journal":{"name":"Nanoscience & Nanotechnology-Asia","volume":"1 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2019-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanoscience & Nanotechnology-Asia","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2174/2210681208666180813122145","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A novel Dual Material Gate Graded Channel and Dual Oxide Thickness Cylindrical
Gate (DMG-GC-DOT) MOSFET is presented in this paper.
Analytical model of drain current is developed using a quasi-two-dimensional cylindrical
form of the Poisson equation and is expressed as a function of the surface potential, which is calculated
using the expressions of the current density.
Comparison of the analytical results with 3D numerical simulations using Silvaco Atlas -
TCAD software presents a good agreement from subthreshold to strong inversion regime and for different
bias voltages.
Two oxide thicknesses with different permittivity can effectively improve the subthreshold
current of DMG-GC-DOT MOSFET.
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