Thermomechanical stress-aware management for 3D IC designs

Abstract

The thermomechanical stress has been considered as one of the most challenging problems in three-dimensional integration circuits (3D ICs), due to the thermal expansion coefficient mismatch between the through-silicon vias (TSVs) and silicon substrate, and the presence of elevated thermal gradients. To address the stress issue, we propose a thorough solution that combines design-time and run-time techniques for the relief of thermomechanical stress and the associated reliability issues. A sophisticated TSV stress-aware floorplan policy is proposed to minimize the possibility of wafer cracking and interfacial delamination. In addition, the run-time thermal management scheme effectively eliminates large thermal gradients between layers. The experimental results show that the reliability of 3D design can be significantly improved due to the reduced TSV thermal load and the elimination of mechanical damaging thermal cycling pattern.