{"title":"Characteristics and abruptness of InGaAs/InP quantum well and optoelectronic applications of quantum wells grown by GSMBE","authors":"H. Iwamura, H. Uenohara, T. Kagawa, M. Naganuma","doi":"10.1109/ICIPRM.1991.147389","DOIUrl":null,"url":null,"abstract":"High quality quantum well structures of InGaAs/InGaAsP and InAlAs/InGaAsP were grown by gas source molecular beam epitaxy (GSMBE). Low-temperature photoluminescence (PL) measurements, transverse electromagnetic (TEM) observation of the cleaved edge, and high-energy electron diffraction (RHEED) patterns obtained during growth of the interface are used to investigate the characteristics of the heterointerface. Multiple quantum well separate confinement heterostructure (MQW-SCH) laser diodes, voltage-controlled bistable laser diodes, and InGaAsP/InAlAs superlattice avalanche photodiodes are discussed as device applications.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"286 1","pages":"353-358"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147389","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
High quality quantum well structures of InGaAs/InGaAsP and InAlAs/InGaAsP were grown by gas source molecular beam epitaxy (GSMBE). Low-temperature photoluminescence (PL) measurements, transverse electromagnetic (TEM) observation of the cleaved edge, and high-energy electron diffraction (RHEED) patterns obtained during growth of the interface are used to investigate the characteristics of the heterointerface. Multiple quantum well separate confinement heterostructure (MQW-SCH) laser diodes, voltage-controlled bistable laser diodes, and InGaAsP/InAlAs superlattice avalanche photodiodes are discussed as device applications.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
![[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials](/Content/css/sci/img/zetp.jpg)
求助内容：
应助结果提醒方式：
扫码关注我们
