Comparing PVD Titanium Nitride Film Properties and their Effect on Beyond 7 nm EUV Patterning

S. DeVries, E. D. De Silva, D. Canaperi, A. Simon, A. A. de la peña, Wei Wang, J. Maniscalco, Luciana Meli, B. Mendoza
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Abstract

Two sources of physical vapor deposition (PVD) titanium nitride (TiN) are compared for beyond 7 nm extreme ultraviolet (EUV) single expose patterning applications. The film density, stress, and grain size affect etch characteristics and refractive index affects lithography and overlay. It was learned that tuning and controlling the film characteristics using radio frequency physical vapor deposition (RFPVD) is critical to patterning applications beyond the 7 nm node.
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比较PVD氮化钛薄膜性能及其对超7nm EUV图像化的影响
比较了两种物理气相沉积(PVD)氮化钛(TiN)在超过7 nm极紫外(EUV)单曝光图案化应用中的应用。薄膜密度、应力和晶粒尺寸影响蚀刻特性,折射率影响光刻和覆盖。据了解,使用射频物理气相沉积(RFPVD)来调整和控制薄膜特性对于7nm以上节点的图图化应用至关重要。
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