Robust Unsupervised Two Layered Network with RRAM Synapses for Image Recognition

A. Lele, P. Kumbhare, U. Ganguly
{"title":"Robust Unsupervised Two Layered Network with RRAM Synapses for Image Recognition","authors":"A. Lele, P. Kumbhare, U. Ganguly","doi":"10.1109/icee44586.2018.8937982","DOIUrl":null,"url":null,"abstract":"Gradual synaptic weight change is a challenge for realistic RRAM, where SET is normally abrupt. Hence, an attractive RESET only learning scheme is demonstrated with a simple circuit implementation. However, the performance is highly sensitive to programming pulse and thus the RRAM characteristics. In this paper, we analyze the circuit implementation to show that performance sensitivity to RRAM programming is not fundamental. Our circuit analysis indicates that the winner-take-all (WTA) circuit malfunctions due to an insufficient time-resolution. Thus, the WTA circuit time-resolution needs to be co-optimized with RRAM and LIF neuron timescale. We experimentally measure a variety of programming characteristics of PCMO based RRAM by program-pulse engineering. We implement this strategy to demonstrate 100% performance irrespective of RRAM as opposed to previous work in a noisy angle learning and classification task. This essentially indicates that energy minimization of synaptic conductance change based on RRAM materials and pulse selection becomes the primary consideration - instead of RRAM gradual conductance change and range. Additionally, the constraint simplification leads to the reduction in energy consumption.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"4 1","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/icee44586.2018.8937982","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Gradual synaptic weight change is a challenge for realistic RRAM, where SET is normally abrupt. Hence, an attractive RESET only learning scheme is demonstrated with a simple circuit implementation. However, the performance is highly sensitive to programming pulse and thus the RRAM characteristics. In this paper, we analyze the circuit implementation to show that performance sensitivity to RRAM programming is not fundamental. Our circuit analysis indicates that the winner-take-all (WTA) circuit malfunctions due to an insufficient time-resolution. Thus, the WTA circuit time-resolution needs to be co-optimized with RRAM and LIF neuron timescale. We experimentally measure a variety of programming characteristics of PCMO based RRAM by program-pulse engineering. We implement this strategy to demonstrate 100% performance irrespective of RRAM as opposed to previous work in a noisy angle learning and classification task. This essentially indicates that energy minimization of synaptic conductance change based on RRAM materials and pulse selection becomes the primary consideration - instead of RRAM gradual conductance change and range. Additionally, the constraint simplification leads to the reduction in energy consumption.
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基于RRAM突触的鲁棒无监督两层网络图像识别
对于现实的随机随机存储器来说,逐渐的突触重量变化是一个挑战,因为SET通常是突然的。因此,用一个简单的电路实现演示了一个有吸引力的仅限RESET的学习方案。然而,性能对编程脉冲和RRAM特性高度敏感。在本文中,我们分析了电路的实现,表明性能对RRAM编程的敏感性不是根本的。我们的电路分析表明,由于时间分辨率不足,赢者通吃(WTA)电路出现故障。因此,WTA电路的时间分辨率需要与RRAM和LIF神经元时间尺度共同优化。通过程序脉冲工程,实验测量了基于PCMO的RRAM的各种编程特性。与之前在噪声角度学习和分类任务中的工作相反,我们实现了这一策略,以证明100%的性能,而不考虑RRAM。这本质上表明,基于RRAM材料和脉冲选择的突触电导变化的能量最小化成为主要考虑因素,而不是RRAM逐渐的电导变化和范围。此外,约束的简化导致了能耗的降低。
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