Preparation of silicon nanowire arrays via electroless metal deposition

Abstract

Large-area silicon nanowire arrays are prepared successfully with mixed AgNO3 and HF solution by EMD method at normal temperature and pressure. It has been proved the best equality of silicon nanowires can be obtained at the concentration ratio of 0.02 mol/l: 5mol/l for AgNO3 and HF and 1h reaction time. The influence of nano metal particles on the growth, the wire diameter, the distribution and the array of silicon nanowires are analyzed. Experimental results show the distribution and wire diameter of silicon nanowires can be controlled effectively by nano metal particles deposited on silicon wafers, and the equality of silicon nanowires with nano Au particles are better than those with nano Pt particles. The reaction mechanism of preparing large-area silicon nanowire arrays is analyzed as the result of the deoxidization of Ag+ and the removal of the oxidized Si solution by reacting with HF.