High Quality AlGaN/GaN HEMT Homo-epitaxy on 4-inch Homebred GaN Substrate by MOCVD

Abstract

High quality AlGaN/GaN HEMT material was grown on the 4-inch GaN substrate by metal-organic chemical vapor deposition (MOCVD). An alternation gas model of ammonia/hydrogen (NH3/H2) mixed gas and H2 gas was employed for the thermal treatment of GaN substrate. Atomic force microscope (AFM) shows straight-step morphology on the surface of the material. The high-resolution X-ray diffractometer (HRXRD) indicates that the full widths at half maximum (FWHM) values of AlGaN/GaN HEMT material for (002) and (102) planes are 48.9 arcsecs and 43.5 arcsecs in the center, respectively. The contactless Hall test results show that the AlGaN/GaN HEMT material has a two dimensional electron gas (2DEG) mobility of 2159 cm2/ V. s and 2DEG density of 8.89 ×1012cm−2, indicating that the homo-epitaxial AlGaN/GaN HEMT material has high quality and good electrical performance.