Schrödinger Equation Monte Carlo-3D for simulation of nanoscale MOSFETs

Abstract

A computational efficient quantum transport simulator, Schrodinger equation Monte Carlo in three dimensions (SEMC-3D), for simulating carrier quantum transport subject to scattering in 3D nanoscale MOSFETs is presented. SEMC-3D self-consistently solves (1) for the 2D-confined eigenstates across the channel as a function of position along the channel, (2) the quasi-1D quantum transport equations for injected carriers propagating through the simulation region within the each subband subject to a rigorous treatment of various intra- and inter-subband and valley scattering processes, and (3) the 3D Poisson equation. The technique, an extension of prior 1D and 2D versions of SEMC but subject to some significantly different computational considerations, is briefly described. SEMC-3D simulations of a Si omega-gate nano-scale nMOSFET are provided to illustrate the modeling capabilities and computational efficiency of SEMC-3D.