S. Ou, P. Kuo, S. Ma, C. Shen, W. Tang, D. Chiang, C. Lee
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引用次数: 0
Abstract
In this study, the (GeSbSn)100-xCox films (x = 0 ∼ 13.3) were deposited on natural oxidized silicon wafer and glass substrate by dc magnetron co-sputtering of GeSbSn and Co targets. The thicknesses of the (GeSbSn)100-xCoxfilms and protective layer were 100 nm and 30 nm, respectively. The phase transition temperatures of (GeSbSn)100-xCox films are decreased with Co content. It is found that the activation energy of the (GeSbSn)100-xCox films will decrease from 1.53 eV to 0.55 eV as Co content increased from 0 at.% to 13.3 at.%.
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