S. Loualiche, A. Le Corre, S. Salaun, S. Durel, D. Lecrosnier, C. Guillemot, C. Vaudry, L. Henry
{"title":"Influence of the well composition and thickness in the GaInP/InP/GaInAs/InP structure for HEMT","authors":"S. Loualiche, A. Le Corre, S. Salaun, S. Durel, D. Lecrosnier, C. Guillemot, C. Vaudry, L. Henry","doi":"10.1109/ICIPRM.1991.147406","DOIUrl":null,"url":null,"abstract":"Photoluminescence, Hall effect, and I-V characteristics of heterostructure InP/GaInAs/InP grown by gas source molecular beam epitaxy (MBE) are presented. The structure is chosen as an alternative to AlInAs/GaInAs/AlInAs to avoid the problems related to the presence of aluminum in HEMT structures. An extremely high indium concentration is used in the well to improve its performance. The InAs well degrades above 10 AA thickness. It is shown that the best experimental results are obtained with a 60 AA GaInAs well (82% InAs) with 2% lattice mismatch.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"6 1","pages":"434-437"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147406","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Photoluminescence, Hall effect, and I-V characteristics of heterostructure InP/GaInAs/InP grown by gas source molecular beam epitaxy (MBE) are presented. The structure is chosen as an alternative to AlInAs/GaInAs/AlInAs to avoid the problems related to the presence of aluminum in HEMT structures. An extremely high indium concentration is used in the well to improve its performance. The InAs well degrades above 10 AA thickness. It is shown that the best experimental results are obtained with a 60 AA GaInAs well (82% InAs) with 2% lattice mismatch.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
![[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials](/Content/css/sci/img/zetp.jpg)
求助内容：
应助结果提醒方式：
扫码关注我们
