Charge Based Compact Modeling of Gate Leakage Mechanism in AlGaN/GaN HEMTs

A. Debnath, Sreenidhi Turuvekre, N. Dasgupta, A. DasGupta
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引用次数: 1

Abstract

The gate leakage mechanism in AlGaN/GaN high electron mobility transistors (HEMT) is studied analytically using a charge-based model over a wide range of bias and temperature. Three distinct current mechanisms, Poole-Frenkel (PF), Defect assisted tunneling (DAT) and Thermionic emission (TE) are modeled. PF is the significant mechanism in reverse bias, while TE and DAT are the two dominant mechanisms in forward and low reverse bias respectively. This model is implemented in Verilog-A and rigorously validated with experimental data.
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基于电荷的AlGaN/GaN hemt栅漏机理紧凑建模
采用基于电荷的模型,在宽偏置和温度范围内对AlGaN/GaN高电子迁移率晶体管(HEMT)中的栅极泄漏机理进行了分析研究。三种不同的电流机制,普尔-弗伦克尔(PF),缺陷辅助隧道(DAT)和热离子发射(TE)建模。PF是影响反向偏置的主要机制,TE和DAT分别是影响正向偏置和低反向偏置的主要机制。该模型在Verilog-A中实现,并通过实验数据进行了严格验证。
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