Electric field driven domain wall transfer in hybrid structures

Xiaopeng Duan, V. Stephanovich, Y. Semenov, H. Fangohr, M. Franchin, K. W. Kim
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Abstract

We proved for the first time the feasibility of the DW motion control by electric field using the exchange interaction between Gr electrons and the FMI layer. A device prototype is designed and modeled. It is shown an effective magnetic field at 10-100 Oe is generated upon the DW, which leads to a velocity around 30 m/s. 0.5-1 GHz operating frequency is expected in this condition as a bi-state memory. No active current is present and the equivalent circuit model is a set of capacitors. Therefore, low energy consumption is achieved, about 10-16 J/switch.
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杂化结构中电场驱动的畴壁转移
利用Gr电子与FMI层之间的交换相互作用,首次证明了电场控制DW运动的可行性。设计并建模了器件原型。结果表明,在DW上产生了10-100 Oe的有效磁场,导致速度约为30 m/s。在这种情况下,工作频率预计为0.5-1 GHz,作为双态存储器。不存在有源电流,等效电路模型是一组电容器。因此,实现了低能耗,约10- 16j /开关。
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