{"title":"Photo-Curable Sol-Gel Hybrid Film as a Dielectric Layer by a Thiol-ene Reaction in Air or N2 for Organic Thin Film Transistors","authors":"Joon-soo Kim, Seungwon Lee, Y. Hwang, Yongho Kim, S. Yoo, B. Bae","doi":"10.1149/2.021205ESL","DOIUrl":null,"url":null,"abstract":"Sol-gel derived oligosiloxane resins are cured under air or N2 by a photo-initiated thiol-ene reaction. The cured film was fabricated as a dielectric layer for use in an organic thin film transistor, and offers a higher dielectric constant (4.13) than silicon dioxide (3.9). We investigated the effects of the curing conditions of a thiol-ene reaction on the TFT performance depending on air or N2. In the N2 conditions, hydroperoxide group (−OOH) free films were generated and they showed low leakage current density and hysteresis free behavior with higher mobility than those fabricated in air. © 2012 The Electrochemical Society. [DOI: 10.1149/2.021205esl] All rights reserved.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"73 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrochemical and Solid State Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2.021205ESL","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
用硫烯在空气或N2中反应光固化溶胶-凝胶杂化膜作为有机薄膜晶体管的介电层
溶胶-凝胶衍生的低聚硅氧烷树脂通过光引发的硫醇-烯反应在空气或N2下固化。固化膜被制成用于有机薄膜晶体管的介电层，并且提供比二氧化硅(3.9)更高的介电常数(4.13)。研究了在空气和N2条件下，硫化条件对TFT性能的影响。在N2条件下，生成了无氢过氧化物基团(- OOH)的膜，其漏电流密度低，无迟滞，迁移率高于空气条件下制备的膜。©2012电化学学会。[DOI: 10.1149/2.021205]版权所有。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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