Will strong quantum confinement effect limit low VCC logic application of III–V FINFETs?

Abstract

We compared the impact of Fin LER and Lg variations in Si and In0.53Ga0.47As FINFETs, for the first time. Better electrostatics in In0.53Ga0.47As than in Si, due to higher effective channel length from lower SD doping in In0.53Ga0.47As, reduces Lg variation impact. Strong quantum confinement effects in In0.53Ga0.47As FINFET make them more sensitive to Fin LER variation than Si. However, the lower sensitivity to LG variation in In0.53Ga0.47As FINFETs compensates for the increased variation from quantum confinement effect. Interestingly, by considering both Fin LER and LG variations, both devices show similar sensitivity to variation. We conclude that tighter control of Fin LER in In0.53Ga0.47As together with improved short channel immunity will make III-VFINFETs a promising device for 0.5V and below logic applications.