{"title":"A very reliable multilevel YSZ resistive switching memory","authors":"Feng Pan, Jaewon Jang, V. Subramanian","doi":"10.1109/DRC.2012.6257024","DOIUrl":null,"url":null,"abstract":"We demonstrate an excellent Resistive Random Access Memory (RRAM) device based on Yttria Stabilized Zirconia (YSZ). Robust multilevel operation is achieved using incremental step pulse programming. Using this scheme, we realize excellent reliability, and further, demonstrate that oxygen vacancy-based cells are superior to metallic filament cells for multilevel operation.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"1 1","pages":"217-218"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"70th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2012.6257024","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
We demonstrate an excellent Resistive Random Access Memory (RRAM) device based on Yttria Stabilized Zirconia (YSZ). Robust multilevel operation is achieved using incremental step pulse programming. Using this scheme, we realize excellent reliability, and further, demonstrate that oxygen vacancy-based cells are superior to metallic filament cells for multilevel operation.
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