The ZnO-based TCO with low resistivity and high carrier concentration prepared by femtosecond laser

Yaoyao Liu, Qiang Wu, J. Yao, Jingjun Xu
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Abstract

ZnO-based TCO with a resistivity of 1.93×10-4 Ω cm was achieved by femtosecond laser processing without elements doping. Besides, the carrier density increased by five orders of magnitude compared to the pristine one.
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利用飞秒激光制备低电阻率、高载流子浓度的zno基TCO
在不掺杂元素的情况下,通过飞秒激光加工获得了电阻率为1.93×10-4 Ω cm的zno基TCO。此外,载流子密度比原始密度提高了5个数量级。
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