Dielectric properties and low temperature relaxation studies of doped TGS single crystals

Abstract

Several kinds of dopants (alanine, LiVO/sub 3/ and valine) doped TGS were grown from solution by slow cooling method. Temperature dependence dielectric spectra were measured to study the variation of transition temperature, K/sub max/ and room temperature dielectric constant depending on the dopants. Furthermore, several pieces were selected to investigate the positional inhomogeneities of the same sample. D-E hysteresis loop measurements were done to check for the internal bias field (E/sub b/). We could not get a high figure of merit (p/K) in valine doped TGS because of low temperature relaxation around -10/spl deg/C, although it has three times higher pyroelectric coefficient than that of alanine at transition temperature (T/sub C/).