S. M. Sultan, S. H. Pu, S. Fishlock, L. H. Wah, H. Chong, J. McBride
{"title":"Electrical behavior of nanocrystalline graphite/p-Si Schottky diode","authors":"S. M. Sultan, S. H. Pu, S. Fishlock, L. H. Wah, H. Chong, J. McBride","doi":"10.1109/NANO.2016.7751379","DOIUrl":null,"url":null,"abstract":"The electrical characteristics of nanocrystalline graphite (NCG) on p-type Si Schottky diodes were investigated. The NCG/p-Si Schottky diodes were fabricated on a 6-inch wafer by metal-free catalyst plasma enhanced chemical vapour deposition (PECVD) and photolithography pattern transfer method. The NCG film consists of nanoscale grains of ~35 nm in size. The NCG/p-Si Schottky diode shows rectifying behavior with Schottky barrier height of 0.58 eV. This result in addition to nanosized grains can be exploited towards various chemical and gas sensor applications.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"370 1","pages":"307-310"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2016.7751379","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
The electrical characteristics of nanocrystalline graphite (NCG) on p-type Si Schottky diodes were investigated. The NCG/p-Si Schottky diodes were fabricated on a 6-inch wafer by metal-free catalyst plasma enhanced chemical vapour deposition (PECVD) and photolithography pattern transfer method. The NCG film consists of nanoscale grains of ~35 nm in size. The NCG/p-Si Schottky diode shows rectifying behavior with Schottky barrier height of 0.58 eV. This result in addition to nanosized grains can be exploited towards various chemical and gas sensor applications.
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