Pub Date : 2016-11-21DOI: 10.1109/NANO.2016.7751466
S. Taki, Y. Umejima, A. Uruno, Xianfeng Zhang, M. Kobayashi
Cu2ZnSn(S,Se)4 (CZTSSe) is a compound semiconductor which replaces a part of S in the CZTS crystal by Se. The bandgap varies from 1.05 eV to 1.51 eV depending on the mole ratio between S and Se. In this paper, CZTSSe thin films were prepared by the selenidation of CZTS film, and the Se mole ratio was tuned by changing annealing conditions. The film quality of the obtained CZTSSe was characterized by X-ray diffraction (XRD) and Hall measurements. It was revealed that both the supply of Se vapor pressure and the annealing temperature of CZTS were controlling parameters for the selenidation of the film. The crystal quality of CZTSSe was also influenced by the supply of Se vapor pressure.
{"title":"Cu2ZnSn(S,Se)4 thin films prepared using Cu2ZnSnS4 nanoparticles","authors":"S. Taki, Y. Umejima, A. Uruno, Xianfeng Zhang, M. Kobayashi","doi":"10.1109/NANO.2016.7751466","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751466","url":null,"abstract":"Cu2ZnSn(S,Se)4 (CZTSSe) is a compound semiconductor which replaces a part of S in the CZTS crystal by Se. The bandgap varies from 1.05 eV to 1.51 eV depending on the mole ratio between S and Se. In this paper, CZTSSe thin films were prepared by the selenidation of CZTS film, and the Se mole ratio was tuned by changing annealing conditions. The film quality of the obtained CZTSSe was characterized by X-ray diffraction (XRD) and Hall measurements. It was revealed that both the supply of Se vapor pressure and the annealing temperature of CZTS were controlling parameters for the selenidation of the film. The crystal quality of CZTSSe was also influenced by the supply of Se vapor pressure.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"8 1","pages":"699-702"},"PeriodicalIF":0.0,"publicationDate":"2016-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83663653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-11-21DOI: 10.1109/NANO.2016.7751526
Jing Yu, Yongliang Yang, K. Seiffert-Sinha, I. Lee, N. Xi, A. Sinha, Ruiguo Yang, Bo Song, Liangliang Chen, Zhiyong Sun
A multi-layer coating enabled drug delivery method has been developed here to augment AFM based nanorobot technology. Being developed for over a decade, the AFM based nanorobot has been established as a key concept of nanorobotics, and has been applied in nanomaterial and biomedical related research. In these AFM based nanorobots, however, the AFM tip was mainly used as a mechanical end-effector to execute pushing and cutting in previous development. With its strong application potential in drug discovery and cell biology, AFM based nanorobots carrying functionalized end-effector are in a strong demand. Previous functionalization of AFM tip was aimed for single molecular interaction measurement. It cannot meet the high volume drug loading for localized drug delivery. Here, we developed a multi-layer coating method to load a large amount of protein on AFM tip for long-time release (~ 40 hours). Combined with the AFM based nanorobot previously developed in our lab, this technology would enable scientists to study mechanical cellular response to protein stimulations.
{"title":"Multi-layer coated nanorobot end-effector for efficient drug delivery","authors":"Jing Yu, Yongliang Yang, K. Seiffert-Sinha, I. Lee, N. Xi, A. Sinha, Ruiguo Yang, Bo Song, Liangliang Chen, Zhiyong Sun","doi":"10.1109/NANO.2016.7751526","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751526","url":null,"abstract":"A multi-layer coating enabled drug delivery method has been developed here to augment AFM based nanorobot technology. Being developed for over a decade, the AFM based nanorobot has been established as a key concept of nanorobotics, and has been applied in nanomaterial and biomedical related research. In these AFM based nanorobots, however, the AFM tip was mainly used as a mechanical end-effector to execute pushing and cutting in previous development. With its strong application potential in drug discovery and cell biology, AFM based nanorobots carrying functionalized end-effector are in a strong demand. Previous functionalization of AFM tip was aimed for single molecular interaction measurement. It cannot meet the high volume drug loading for localized drug delivery. Here, we developed a multi-layer coating method to load a large amount of protein on AFM tip for long-time release (~ 40 hours). Combined with the AFM based nanorobot previously developed in our lab, this technology would enable scientists to study mechanical cellular response to protein stimulations.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"177 1","pages":"511-514"},"PeriodicalIF":0.0,"publicationDate":"2016-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75454601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-11-21DOI: 10.1109/NANO.2016.7751573
T. Shinada, E. Prati, T. Tanii, T. Teraji, S. Onoda, F. Jelezko, J. Isoya
Nanoscale electronic devices will require the placement of dopants in a predetermined location, namely, a single atom control to explore novel functions for future nanoelectronics. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.
{"title":"Deterministic doping to silicon and diamond materials for quantum processing","authors":"T. Shinada, E. Prati, T. Tanii, T. Teraji, S. Onoda, F. Jelezko, J. Isoya","doi":"10.1109/NANO.2016.7751573","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751573","url":null,"abstract":"Nanoscale electronic devices will require the placement of dopants in a predetermined location, namely, a single atom control to explore novel functions for future nanoelectronics. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"19 1","pages":"888-890"},"PeriodicalIF":0.0,"publicationDate":"2016-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90040063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-11-21DOI: 10.1109/NANO.2016.7751484
Y. Nozaki, T. Kanai, A. Matsuo, D. Tanaka, I. Yuito, T. Takeuchi, T. Sekiguchi, S. Shoji
We conducted an experiment on the fabrication of fluidic devices for producing fine droplets. In our proposed method, multiple channels were fabricated by using a focused ion beam (FIB) system. The minimum feature top width was found to be approximately 56 nm. When both the target width and depth of one channel were set to 500 nm, the resultant top width was 750-780 nm, the bottom width was 250-320 nm, and the depth was 560 nm, almost achieving the target size for the channel depth.
{"title":"Fabrication process of fluidic devices for producing fine droplets using a focused ion beam system","authors":"Y. Nozaki, T. Kanai, A. Matsuo, D. Tanaka, I. Yuito, T. Takeuchi, T. Sekiguchi, S. Shoji","doi":"10.1109/NANO.2016.7751484","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751484","url":null,"abstract":"We conducted an experiment on the fabrication of fluidic devices for producing fine droplets. In our proposed method, multiple channels were fabricated by using a focused ion beam (FIB) system. The minimum feature top width was found to be approximately 56 nm. When both the target width and depth of one channel were set to 500 nm, the resultant top width was 750-780 nm, the bottom width was 250-320 nm, and the depth was 560 nm, almost achieving the target size for the channel depth.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"70 1","pages":"795-798"},"PeriodicalIF":0.0,"publicationDate":"2016-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89623397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-11-21DOI: 10.1109/NANO.2016.7751469
Y. Tzeng, Yen-Ting Pan
Both conventional graphite and emerging new anode materials, such as silicon based anodes for lithium ion batteries have been coated with nitrogen-incorporated ultrananocrystalline diamond, graphene, and their hybrids. Novel micro- and nano-structures of the anodes enable the LIBs to survive repetitive charging and discharging by much higher number of cycles than those anodes without such innovative nano-carbon coatings. This paper presents the fabrication processes, excellent performance of the LIB anodes and their electrical and electrochemical properties.
{"title":"Nitrogen-incorporated ultrananocrystalline diamond and graphene nanowalls coated graphite and silicon anodes for long-life lithium ion batteries","authors":"Y. Tzeng, Yen-Ting Pan","doi":"10.1109/NANO.2016.7751469","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751469","url":null,"abstract":"Both conventional graphite and emerging new anode materials, such as silicon based anodes for lithium ion batteries have been coated with nitrogen-incorporated ultrananocrystalline diamond, graphene, and their hybrids. Novel micro- and nano-structures of the anodes enable the LIBs to survive repetitive charging and discharging by much higher number of cycles than those anodes without such innovative nano-carbon coatings. This paper presents the fabrication processes, excellent performance of the LIB anodes and their electrical and electrochemical properties.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"44 1","pages":"426-428"},"PeriodicalIF":0.0,"publicationDate":"2016-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90959306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-11-21DOI: 10.1109/NANO.2016.7751326
C. Lu, Y. H. Chen, S. J. Chang, T. Hsueh
A ZnO-nanowire photodetector was prepared using three-dimensional through silicon via (TSV) technology. The diameter and depth of the Si via were about 80 μm and 175 μm, respectively. Cu uniformly filled in each TSV, whose average resistance was about 1 mΩ. Upon illumination with UV light (= 330 nm), it was found that measured responsivities is 7.38×10-3 A/W for the 3D TSV ZnO nanowire photodetector biased at 8 V. Furthermore, a rejection ratio of approximately 170 was obtained for the 3D TSV ZnO nanowire photodetector with an applied bias of 8 V.
{"title":"A three-dimensional ZnO nanowires photodetector","authors":"C. Lu, Y. H. Chen, S. J. Chang, T. Hsueh","doi":"10.1109/NANO.2016.7751326","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751326","url":null,"abstract":"A ZnO-nanowire photodetector was prepared using three-dimensional through silicon via (TSV) technology. The diameter and depth of the Si via were about 80 μm and 175 μm, respectively. Cu uniformly filled in each TSV, whose average resistance was about 1 mΩ. Upon illumination with UV light (= 330 nm), it was found that measured responsivities is 7.38×10-3 A/W for the 3D TSV ZnO nanowire photodetector biased at 8 V. Furthermore, a rejection ratio of approximately 170 was obtained for the 3D TSV ZnO nanowire photodetector with an applied bias of 8 V.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"72 1","pages":"67-69"},"PeriodicalIF":0.0,"publicationDate":"2016-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76707423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-11-21DOI: 10.1109/NANO.2016.7751445
Kuen-Lin Chen, Yao-Wei Yeh, S. Liao, Chiu-Hsien Wu, Li-Min Wang
To improve the image contrast, the so-called contrast agents (CAs) are often used in magnetic resonance image (MRI). CAs are generally paramagnetic or superparamagnetic nanoparticle suspensions. To increase the applicability of low field nuclear magnetic resonance (LFNMR) or LFMRI system, CAs also have been introduced to enhance the image contrast. In this work, we synthesized the γ-Fe2O3/Au core/shell (γ-Fe2O3@Au) nanoparticle and applied it to a homemade high-Tc SQUID-based LFNMR system to study the characteristics of γ-Fe2O3@Au nanoparticle as the contrast agent for the LFNMR system. The average hydrodynamic sizes of the synthesized γ-Fe2O3@Au nanoparticles are 28.38 ± 6.26 nm in diameter. The γ-Fe2O3@Au nanoparticles exhibit a characteristic absorption peak at 536 nm from the contribution of localized surface plasmon resonance of Au shell. The spin-lattice relaxation rate, 1/T1, and the spin-spin relaxation rate, 1/T2, varied with the concentration of γ-Fe2O3@Au nanoparticle. Compared with the data measured in high field (7 Tesla), we found that the γ-Fe2O3@Au nanoparticle is a promising T1-relaxing CA for LFNMR.
{"title":"Study of γ-Fe2O3/Au core/shell nanoparticles as the contrast agent for high-Tc SQUID-based low field nuclear magnetic resonance","authors":"Kuen-Lin Chen, Yao-Wei Yeh, S. Liao, Chiu-Hsien Wu, Li-Min Wang","doi":"10.1109/NANO.2016.7751445","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751445","url":null,"abstract":"To improve the image contrast, the so-called contrast agents (CAs) are often used in magnetic resonance image (MRI). CAs are generally paramagnetic or superparamagnetic nanoparticle suspensions. To increase the applicability of low field nuclear magnetic resonance (LFNMR) or LFMRI system, CAs also have been introduced to enhance the image contrast. In this work, we synthesized the γ-Fe<sub>2</sub>O<sub>3</sub>/Au core/shell (γ-Fe<sub>2</sub>O<sub>3</sub>@Au) nanoparticle and applied it to a homemade high-T<sub>c</sub> SQUID-based LFNMR system to study the characteristics of γ-Fe<sub>2</sub>O<sub>3</sub>@Au nanoparticle as the contrast agent for the LFNMR system. The average hydrodynamic sizes of the synthesized γ-Fe<sub>2</sub>O<sub>3</sub>@Au nanoparticles are 28.38 ± 6.26 nm in diameter. The γ-Fe<sub>2</sub>O<sub>3</sub>@Au nanoparticles exhibit a characteristic absorption peak at 536 nm from the contribution of localized surface plasmon resonance of Au shell. The spin-lattice relaxation rate, 1/T<sub>1</sub>, and the spin-spin relaxation rate, 1/T<sub>2</sub>, varied with the concentration of γ-Fe<sub>2</sub>O<sub>3</sub>@Au nanoparticle. Compared with the data measured in high field (7 Tesla), we found that the γ-Fe<sub>2</sub>O<sub>3</sub>@Au nanoparticle is a promising T<sub>1</sub>-relaxing CA for LFNMR.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"17 1","pages":"585-586"},"PeriodicalIF":0.0,"publicationDate":"2016-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79762721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-11-21DOI: 10.1109/NANO.2016.7751376
M. Soejima, K. Koga, M. Shiratani
We have analyzed inter-particle potential during binary collision of two fine particles suspended at the plasma/sheath boundary. For this analysis, we have employed a tracking analysis which gives time evolution of the particle position automatically from the movie of particle behavior. The fluctuation of inter-particle potential is originated from a major component of the plasma potential fluctuation and minor one of the particle charge fluctuation. The tracking analysis of fine particles is a promising method to provide fluctuation of plasma potential with ultrahigh sensitivity at a local position.
{"title":"Inter-particle potential fluctuation of two fine particles suspended in Ar plasmas","authors":"M. Soejima, K. Koga, M. Shiratani","doi":"10.1109/NANO.2016.7751376","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751376","url":null,"abstract":"We have analyzed inter-particle potential during binary collision of two fine particles suspended at the plasma/sheath boundary. For this analysis, we have employed a tracking analysis which gives time evolution of the particle position automatically from the movie of particle behavior. The fluctuation of inter-particle potential is originated from a major component of the plasma potential fluctuation and minor one of the particle charge fluctuation. The tracking analysis of fine particles is a promising method to provide fluctuation of plasma potential with ultrahigh sensitivity at a local position.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"37 1","pages":"671-673"},"PeriodicalIF":0.0,"publicationDate":"2016-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78054515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) was applied for the fabrication of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). In this work, a-IGZO TFTs fabricated by AP-PECVD technique were firstly treated by post deposition of in-situ Ar/H2 plasma with atmospheric pressure plasma Jet (APPJ). Compared to without plasma treatment, samples with the post in-situ Ar/H2 plasma treatment on IGZO active layer exhibited higher mobility of 20.12 cm2/V·S, VT of 1.11 V, lower subthreshold swing of 93 mV/decade, higher Ion/Ioff of 5.34×107. The excellent IGZO TFTs fabricated by AP-PECVD technique also show highly transparent characteristics.
{"title":"The investigation for In-Ga-Zn-O TFTs with post deposition of in-situ Ar/H2 plasma treatment by atmospheric pressure plasma Jet","authors":"Kow-Ming Chang, Bo-Wen Huang, Chien-Hung Wu, Hsin-Ying Chen, Y. Zheng, Ming-Chuan Lee, Yu-Xin Zhang, Chuang-Ju Lin, Yu-Hsuan Cheng, Shui-Jinn Wang, Jui-Mei Hsu, Yuli Lin","doi":"10.1109/NANO.2016.7751471","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751471","url":null,"abstract":"Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) was applied for the fabrication of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). In this work, a-IGZO TFTs fabricated by AP-PECVD technique were firstly treated by post deposition of in-situ Ar/H<sub>2</sub> plasma with atmospheric pressure plasma Jet (APPJ). Compared to without plasma treatment, samples with the post in-situ Ar/H<sub>2</sub> plasma treatment on IGZO active layer exhibited higher mobility of 20.12 cm<sup>2</sup>/V·S, V<sub>T</sub> of 1.11 V, lower subthreshold swing of 93 mV/decade, higher I<sub>on</sub>/I<sub>off</sub> of 5.34×10<sup>7</sup>. The excellent IGZO TFTs fabricated by AP-PECVD technique also show highly transparent characteristics.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"405-407"},"PeriodicalIF":0.0,"publicationDate":"2016-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89572104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-11-21DOI: 10.1109/NANO.2016.7751333
T. Kuo, T. Shih, Yin-Hsien Su, Wen-Hsi Lee, W. Liao
Molybdenum-Tungsten (MoxW) alloy films were deposited on SiO2 substrates by reactive sputtering. Direct electroplating Cu on Molybdenum-Tungsten alloy films and annealing in N2 were carried out. In this study, the effect of electroplating time and annealing temperature on the structural, plating and wetting ability of Molybdenum-Tungsten alloy films was investigated. The films were characterized by X-ray photoelectron spectroscopy (XPS) and scanning electron microscope (SEM). The results show that Cu can be directly electroplated on Molybdenum-Tungsten alloy films with uniform nucleation. After annealing, de-wetting behavior of Molybdenum-Tungsten alloy films are shown to be better than Ta even up to 500°C.
{"title":"Investigation the plating and wetting ability of reactive sputtered Molybdenum-Tungsten multi-layers for advanced Cu metallization","authors":"T. Kuo, T. Shih, Yin-Hsien Su, Wen-Hsi Lee, W. Liao","doi":"10.1109/NANO.2016.7751333","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751333","url":null,"abstract":"Molybdenum-Tungsten (MoxW) alloy films were deposited on SiO2 substrates by reactive sputtering. Direct electroplating Cu on Molybdenum-Tungsten alloy films and annealing in N2 were carried out. In this study, the effect of electroplating time and annealing temperature on the structural, plating and wetting ability of Molybdenum-Tungsten alloy films was investigated. The films were characterized by X-ray photoelectron spectroscopy (XPS) and scanning electron microscope (SEM). The results show that Cu can be directly electroplated on Molybdenum-Tungsten alloy films with uniform nucleation. After annealing, de-wetting behavior of Molybdenum-Tungsten alloy films are shown to be better than Ta even up to 500°C.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"22 1","pages":"703-705"},"PeriodicalIF":0.0,"publicationDate":"2016-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85634472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：