Relationship between electric properties and surface flatness of (ZnO)x(InN)1−x films on ZnO templates

K. Matsushima, M. Shiratani, N. Itagaki
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Abstract

We have studied effects of deposition temperature on electrical properties of (ZnO)x(InN)1-x (ZION) films on ZnO templates. With increasing the deposition temperature from RT to 450°C, the electron mobility decreases from 93 cm2/Vs to 70 cm2/Vs and the carrier density increases from 1.8×1019 cm-3 to 3.4×1019 cm-3. Furthermore, we found a correlation between electrical properties and root mean square (RMS) roughness of the films. These results suggest the surface flatness is an important parameter to determine electrical properties of ZION films.
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ZnO模板上(ZnO)x(InN)1−x薄膜的电学性能与表面平整度的关系
我们研究了沉积温度对ZnO模板上(ZnO)x(InN)1-x (ZION)薄膜电性能的影响。随着沉积温度从RT升高到450℃,电子迁移率从93 cm2/Vs降低到70 cm2/Vs,载流子密度从1.8×1019 cm-3增加到3.4×1019 cm-3。此外,我们发现电学性质与薄膜的均方根(RMS)粗糙度之间存在相关性。这些结果表明,表面平整度是决定锡安薄膜电性能的一个重要参数。
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