Damage engineering on Purion XE™ high energy ion implanter

Abstract

Many IC and CIS manufacturers still rely heavily on batch high energy ion implanters such as the Axcelis HE3 and Paradigm XE systems. Angle control continues to become increasingly important with the scaling of devices and the increasing use of channeled implants to reduce the number of implant steps needed to produce a box-like dopant profile. The use of channeled implants limits the use of batch ion implanters for these applications due to the cone angle effect. The introduction of serial high energy ion implanters to replace the batch implanters has exposed subtle differences in damage characteristics related to the differences in tool architecture. Investigation into second order differences in the damage characteristics of the single wafer and batch implanters have resulted in the development of a new system for modifying the electrostatic scanning of the ion beam on the Purion XE with implications for improvement in damage reduction, low dose stability and utilization of the system's mechanical throughput limit.