Transient photoluminescence in InGaN nano-disks fabricated by nano-scale neutral-beam etching utilizing bio-nano templates

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2016-08-01 DOI:10.1109/NANO.2016.7751321

Yafeng Chen, Shula L. Chen, T. Kiba, C. Lee, C. Thomas, Y. Lai, A. Higo, S. Samukawa, A. Murayama

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Abstract

We study transient photoluminescence (PL) in In0.2Ga0.8N nano-disks (NDs) fabricated from a 2 or 3 nm-thick quantum well (QW) by damage-free neutral-beam etching utilizing bio-nano-engineered etching templates. A lateral averaged diameter of the ND was controlled to be 9 nm with a high sheet-density up to 2.6×1011 cm-2. Transient PL in the NDs was measured as a function of temperature and compared with that in the mother QWs. Thermal quenching of PL is strongly suppressed in the NDs, while the PL intensity in the QWs rapidly decreases with increasing temperature. A PL-decay time in the NDs is 0.1 ns at 6 K, which is significantly shorter than that of 3.5 ns in the QW. The temperature dependence of the PL decaying property shows that a radiative decay time of 0.1 ns in the NDs is almost constant for temperature, while a non-radiative one decreases with increasing temperature. This significantly faster and relatively temperature-insensitive radiative decay time can be attribute to the strong confinement due to the ND formation in addition to strain relaxation.

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利用生物纳米模板制备的InGaN纳米盘的瞬态光致发光研究

利用生物纳米工程蚀刻模板，利用无损伤中性光束蚀刻技术，研究了由2或3纳米厚量子阱(QW)制备的In0.2Ga0.8N纳米盘(NDs)的瞬态光致发光(PL)。ND的横向平均直径控制在9 nm，板材密度高达2.6×1011 cm-2。测量了NDs中瞬态PL随温度的变化，并与母QWs进行了比较。光致发光的热猝灭在NDs中受到强烈抑制，而量子阱中的光致发光强度随着温度的升高而迅速降低。在6 K时，NDs中的pl衰减时间为0.1 ns，明显短于QW中的3.5 ns。PL衰减特性的温度依赖性表明，NDs中0.1 ns的辐射衰减时间随着温度的升高几乎是恒定的，而非辐射衰减时间则随着温度的升高而减小。这种明显更快且相对温度不敏感的辐射衰减时间可以归因于除了应变松弛外ND形成的强约束。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)

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