Cheng Peng, P. Yang, Liangcai Wu, Zhitang Song, F. Rao, Jian'an Xu, Xilin Zhou, Min Zhu, Bo Liu, J. Chu
{"title":"N-Doped Si0.6Sb2Te3 Material for Applications of Phase-Change Memory","authors":"Cheng Peng, P. Yang, Liangcai Wu, Zhitang Song, F. Rao, Jian'an Xu, Xilin Zhou, Min Zhu, Bo Liu, J. Chu","doi":"10.1149/2.022204ESL","DOIUrl":null,"url":null,"abstract":"Nitrogen incorporated Si0.6Sb2Te3 film shows higher crystallization temperature (similar to 185 degrees C) than Ge2Sb2Te5 (similar to 150 degrees C). No separated Si or Te phase is observed within crystalline nitrogen-doped Si0.6Sb2Te3 material (SST-N). N","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"40 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrochemical and Solid State Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2.022204ESL","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Nitrogen incorporated Si0.6Sb2Te3 film shows higher crystallization temperature (similar to 185 degrees C) than Ge2Sb2Te5 (similar to 150 degrees C). No separated Si or Te phase is observed within crystalline nitrogen-doped Si0.6Sb2Te3 material (SST-N). N
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