Excess carrier mapping technique — A new parameter extraction method for 4H-SiC ambipolar power devices

Meng-Chia Lee, Xiaoqing Song, A. Huang
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Abstract

This paper proposes for the first time a novel characterization technique that can directly profile the spatial excess carrier in the voltage supporting drift region of a power device based on inductive switching waveforms. The theory this method is based on is to translate the dv/dt during inductive switching to the local excess carrier (from V(t)-t to 6p(x)-x). The information of the extracted profile can be used to obtain (i) ambipolar lifetime and (ii) Stored excess charge at given current in the device and (iii) estimate the carrier density near the side where majority carrier is injected. This model is used to extract carrier distribution of a high voltage SiC IGBT and GTO but the model can also be applied to other bipolar devices such as Si IGBT.
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过量载流子映射技术——一种新的4H-SiC双极功率器件参数提取方法
本文首次提出了一种基于感应开关波形的新型表征技术,可以直接表征功率器件电压支撑漂移区空间多余载流子。该方法的理论基础是将感应开关期间的dv/dt转换为局部多余载波(从V(t)-t到6p(x)-x)。提取的剖面信息可用于获得(i)双极性寿命和(ii)给定电流下器件中存储的多余电荷,以及(iii)估计注入大部分载流子的一侧附近的载流子密度。该模型用于提取高压SiC IGBT和GTO的载流子分布,但该模型也可以应用于其他双极器件,如Si IGBT。
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