{"title":"All-Silicon On-Chip Polarizer with> 415 nm working bandwidth","authors":"Weixi Liu, D. Dai, Yaocheng Shi","doi":"10.1109/ICOCN53177.2021.9563697","DOIUrl":null,"url":null,"abstract":"We proposed and demonstrated an all-silicon TM polarizer by introducing double-slot Euler bending on 340-nm SOI with experimental excess loss < 1 dB and polarization extinction ratio> 25 dB over> 415-nm working bandwidth.","PeriodicalId":6756,"journal":{"name":"2021 19th International Conference on Optical Communications and Networks (ICOCN)","volume":"75 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2021-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 19th International Conference on Optical Communications and Networks (ICOCN)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICOCN53177.2021.9563697","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We proposed and demonstrated an all-silicon TM polarizer by introducing double-slot Euler bending on 340-nm SOI with experimental excess loss < 1 dB and polarization extinction ratio> 25 dB over> 415-nm working bandwidth.
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