Resistive switching performance of memristor with solution-processed stacked MO/2D-materials switching layers

Zongjie Shen, Chun Zhao, I. Mitrovic, Cezhou Zhao, Yina Liu, Li Yang
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Abstract

In this work, the RRAM device with the structure of Ag/AlOx/MXene/ITO was fabricated with the stacked solution-processed switching layers. The device operated with a low voltage around ~2.0 V and exhibited a stable ON/OFF ratio larger than 104. Apart from excellent stability with endurance cycles of more than 100 and retention time of longer than 104 s, typical synaptic behaviors including long-term potentiation and depression (LTP/LTD) were also obtained, which had a positive influence on the following pattern recognition process and the average value of the recognition was around ~90%.
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溶液加工MO/ 2d材料堆叠开关层忆阻器的阻性开关性能
在本工作中,利用溶液处理的堆叠开关层制备了具有Ag/AlOx/MXene/ITO结构的RRAM器件。该器件工作在~2.0 V左右的低电压下,具有大于104的稳定的ON/OFF比。除了具有良好的稳定性,耐力周期超过100次,保持时间超过104 s外,还获得了典型的突触行为,包括长期增强和抑制(LTP/LTD),这对后续的模式识别过程有积极的影响,识别率平均在~90%左右。
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