Simulation study on thermal mechanical properties of 4×4 Micro-LED array in flip-chip bonding process

Xiaoxiao Ji, Fei Wang, Luqiao Yin, Jianhua Zhang
{"title":"Simulation study on thermal mechanical properties of 4×4 Micro-LED array in flip-chip bonding process","authors":"Xiaoxiao Ji, Fei Wang, Luqiao Yin, Jianhua Zhang","doi":"10.1109/SSLChinaIFWS54608.2021.9675238","DOIUrl":null,"url":null,"abstract":"With the advent of the Micro-light-emitting diodes, it has become the focus of display and visible light communication research. However, as the LED chip size shrinks, the difficulty of integration increase gradually. Nowadays, the integration of Micro- LEDs in display is still a challenge for commercialization. In this work, we conducted a comparative study by finite element method simulation to reveal the influencing factors of bonding yield. The results show that stress concentrates at the junction of the bumps and electrodes of Micro-LED chips, and the stress concentration at the corner of Micro-LED array is more seriously. By altering the parameters of bumps, such as shapes and materials to reduce the stress and stress concentration. Numerical simulate results provide theoretical basis for reducing stress and stress concentration and optimizing the bump shape.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"17 1","pages":"135-138"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675238","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

With the advent of the Micro-light-emitting diodes, it has become the focus of display and visible light communication research. However, as the LED chip size shrinks, the difficulty of integration increase gradually. Nowadays, the integration of Micro- LEDs in display is still a challenge for commercialization. In this work, we conducted a comparative study by finite element method simulation to reveal the influencing factors of bonding yield. The results show that stress concentrates at the junction of the bumps and electrodes of Micro-LED chips, and the stress concentration at the corner of Micro-LED array is more seriously. By altering the parameters of bumps, such as shapes and materials to reduce the stress and stress concentration. Numerical simulate results provide theoretical basis for reducing stress and stress concentration and optimizing the bump shape.
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4×4微型led阵列倒装键合过程热力学性能仿真研究
随着微型发光二极管的出现,它已成为显示和可见光通信研究的热点。然而,随着LED芯片尺寸的缩小,集成的难度逐渐增加。目前,微型led在显示屏上的集成仍然是一个商业化的挑战。在本工作中,我们通过有限元法模拟进行了对比研究,揭示了粘结收率的影响因素。结果表明:微led芯片凸起处和电极处应力集中,微led阵列拐角处应力集中更为严重;通过改变凸点的参数,如形状和材料来减小应力和应力集中。数值模拟结果为减小应力和应力集中、优化凸包形状提供了理论依据。
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