Effect of TIPS-Pentacene:Polystyrene Blend Ratio on Electrical Performance and Stability of Solution Processed Organic Field-Effect Transistors

Vivek Raghuwanshi, Deepak Bharti, A. Mahato, Ishan Varun, S. P. Tiwari
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引用次数: 1

Abstract

We report the effect of varying the semiconductor:polymer blend ratio on the electrical performance and bias-stress stability of the organic field effect transistors (OFETs) with TIPS-Pentacene and polystyrene as semiconductor and polymer combination. Device performance was found to improve with increasing polymer content in the solution. Devices with 1:3 TIPS-Pentacene:polystyrene blend outperformed the other counterparts with high performance, and demonstrated least performance variation with regular 100 transfer measurement cycles. In addition, 1:3 blend devices have shown the least normalized drain current decay of $\sim$ 8.5 % with the bias stress condition of VDS = VGS = -30 V for 2 h, as compared to the 1:1, 3:1 and neat devices with the decay of 15 %, 37 % and 71 % respectively. Additionally, a better recovery of electrical characteristics was observed in blend devices with larger polymer fractions from the deteriorating effects of gate bias stress.
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tips -并五苯:聚苯乙烯共混比对溶液加工有机场效应晶体管电性能和稳定性的影响
本文报道了半导体与聚合物混合比例对以TIPS-Pentacene和聚苯乙烯为半导体和聚合物组合的有机场效应晶体管(ofet)电性能和偏置应力稳定性的影响。随着溶液中聚合物含量的增加,器件性能得到改善。1:3 TIPS-Pentacene:聚苯乙烯共混物的设备性能优于其他同类产品,并且在常规100次转移测量循环中表现出最小的性能变化。此外,在VDS = VGS = -30 V的偏置应力条件下,1:3混合器件的归一化漏极电流衰减最小,为8.5%,而1:1、3:1和纯混合器件的归一化漏极电流衰减分别为15%、37%和71%。此外,在栅极偏置应力恶化的影响下,观察到具有较大聚合物组分的混合器件的电特性得到了更好的恢复。
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