Ching-I Li, G. Lin, Rekha Padmanabhan, G. N. Cai, Z. Wan, W. Platow, K. Saadatmand, Po-Heng Lin, Chih-Ming Tai, R. Chang
{"title":"Integrated divergent beam for FinFET Conformal Doping","authors":"Ching-I Li, G. Lin, Rekha Padmanabhan, G. N. Cai, Z. Wan, W. Platow, K. Saadatmand, Po-Heng Lin, Chih-Ming Tai, R. Chang","doi":"10.1109/IIT.2014.6939992","DOIUrl":null,"url":null,"abstract":"In order to achieve high performance finFET devices, it is important to achieve a high concentration and conformal doping within the Fin. In this paper, a solution for conformal finFET doping method is demonstrated. We present a novel implantation condition called Integrated Divergent Beam (IDB) that consists of various implant angle distribution. We perform the IDB Arsenic implantation by Monte-Carlo simulation.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"90 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 20th International Conference on Ion Implantation Technology (IIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIT.2014.6939992","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
In order to achieve high performance finFET devices, it is important to achieve a high concentration and conformal doping within the Fin. In this paper, a solution for conformal finFET doping method is demonstrated. We present a novel implantation condition called Integrated Divergent Beam (IDB) that consists of various implant angle distribution. We perform the IDB Arsenic implantation by Monte-Carlo simulation.
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