{"title":"Finite element simulation of thermal properties of 40Si-Al alloys for electronics packaging","authors":"Shen Wei, Pu Yu-ping, Zhao Peng, Zhu Li-ran","doi":"10.1109/ISAPM.2011.6105729","DOIUrl":null,"url":null,"abstract":"Due to lighter, stiffer and offer superior heat-sinking than traditional packaging materials, Si-Al alloys have been proved as novel materials used for packaging microwave hybrid circuitry. In the current paper, finite element geometric models based on the real microstructural images of 40Si-Al are generated. Furthermore, based on Fourier's law for heat conduction and thermal expansion equation, thermal properties including the thermal conductivity and the coefficient of thermal expansion (CTE) of 40Si-Al are quantified by finite element method (FEM). By means of statistical method in conjunction with FEM results, the thermal conductivity and CTE at room temperature are calculated, respectively. The numerical simulation result agrees with the corresponding experimental result, which shows that the methodology developed in this paper is efficient in calculating thermal properties of Si-Al alloys.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Symposium on Advanced Packaging Materials (APM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAPM.2011.6105729","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Due to lighter, stiffer and offer superior heat-sinking than traditional packaging materials, Si-Al alloys have been proved as novel materials used for packaging microwave hybrid circuitry. In the current paper, finite element geometric models based on the real microstructural images of 40Si-Al are generated. Furthermore, based on Fourier's law for heat conduction and thermal expansion equation, thermal properties including the thermal conductivity and the coefficient of thermal expansion (CTE) of 40Si-Al are quantified by finite element method (FEM). By means of statistical method in conjunction with FEM results, the thermal conductivity and CTE at room temperature are calculated, respectively. The numerical simulation result agrees with the corresponding experimental result, which shows that the methodology developed in this paper is efficient in calculating thermal properties of Si-Al alloys.