Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105673
L. Guoguang, Yang Shaohua, Lei Zhifeng
Light-emitting diodes (LEDS) are a strong candidate for the nest-generation general illumination applications. The reliability of LEDs is the key point for its applications, and the main challenges facing the development of high reliable LED is packaging process. In this paper, the overview of state of the art techniques in LED failure analysis is provided, and the main failure modes such as bonding defects, die attaching defects and other defects that caused by poor package process are investigated through some failure analysis cases.
{"title":"Failure analysis of LEDs","authors":"L. Guoguang, Yang Shaohua, Lei Zhifeng","doi":"10.1109/ISAPM.2011.6105673","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105673","url":null,"abstract":"Light-emitting diodes (LEDS) are a strong candidate for the nest-generation general illumination applications. The reliability of LEDs is the key point for its applications, and the main challenges facing the development of high reliable LED is packaging process. In this paper, the overview of state of the art techniques in LED failure analysis is provided, and the main failure modes such as bonding defects, die attaching defects and other defects that caused by poor package process are investigated through some failure analysis cases.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78046550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105696
Yang Liu, F. Sun, Pengfei Zou
Recently, the development of low-Ag Sn-Ag-Cu (SAC) solders has become a new research field in electronic packaging industry because of the braze reliability and cost concerns. In this study, the shear strength and interfacial microstructures of two kinds of low-Ag solder joints, SAC/Cu and SAC-Bi-Ni/Cu, were investigated. The results obtained affirmed that the addition of Ni and Bi in low-Ag SAC0705 solder improves the shear strength of the solder joints and decreases the fracture ductility of the alloy. With 3.5% Bi and 0.1% Ni addition, the shear strength increases from 11.09MPa to 19.51MPa. For low-Ag solder joints investigated in this research, the shear dimples mostly appear at the interface between bulk solder and interfacial IMC.
近年来，低银Sn-Ag-Cu (SAC)钎料的开发由于钎焊的可靠性和成本问题而成为电子封装行业的一个新的研究领域。研究了SAC/Cu和SAC- bi - ni /Cu两种低银钎料的抗剪强度和界面显微组织。结果表明，在低银SAC0705钎料中添加Ni和Bi，提高了钎料的抗剪强度，降低了合金的断裂延展性。当添加3.5% Bi和0.1% Ni时，抗剪强度由11.09MPa提高到19.51MPa。对于本研究的低银焊点，剪切韧窝主要出现在大块焊料和界面IMC之间的界面上。
{"title":"Shear strength and interfacial microstructures of low-Ag SAC/Cu and SAC-Bi-Ni/Cu solder joints","authors":"Yang Liu, F. Sun, Pengfei Zou","doi":"10.1109/ISAPM.2011.6105696","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105696","url":null,"abstract":"Recently, the development of low-Ag Sn-Ag-Cu (SAC) solders has become a new research field in electronic packaging industry because of the braze reliability and cost concerns. In this study, the shear strength and interfacial microstructures of two kinds of low-Ag solder joints, SAC/Cu and SAC-Bi-Ni/Cu, were investigated. The results obtained affirmed that the addition of Ni and Bi in low-Ag SAC0705 solder improves the shear strength of the solder joints and decreases the fracture ductility of the alloy. With 3.5% Bi and 0.1% Ni addition, the shear strength increases from 11.09MPa to 19.51MPa. For low-Ag solder joints investigated in this research, the shear dimples mostly appear at the interface between bulk solder and interfacial IMC.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78951191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105752
Xue Feng, Liming Gao, Ming Li
Through silicon via (TSV) is a high performance technique to create 3D packages and 3Dintegrated circuits, compared to alternatives such as package-on-package, because the density of via is substantially higher. The correlation of stress and texture evolution during self-annealing of copper electrodeposited from TSV filling methanesulfonate bath has been studied by Surface Profiler, X-ray diffraction (XRD) and Scanning electron microscope (SEM). Methanesulfonate bath is first used in correlative research. We show that addition of different organic additives can strong affect the stress and texture of electrodeposited cupper films. The XRD patterns of copper films reveal the presence of (1 1 1), (2 0 0), (2 2 0), and (3 1 1) peaks, intensity of which is connect with the concentration of the electroplated bath and the organic additives in the plating bath.
{"title":"Stress evolution during self-annealing of methanesulfonate bath electroplating cu for TSV","authors":"Xue Feng, Liming Gao, Ming Li","doi":"10.1109/ISAPM.2011.6105752","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105752","url":null,"abstract":"Through silicon via (TSV) is a high performance technique to create 3D packages and 3Dintegrated circuits, compared to alternatives such as package-on-package, because the density of via is substantially higher. The correlation of stress and texture evolution during self-annealing of copper electrodeposited from TSV filling methanesulfonate bath has been studied by Surface Profiler, X-ray diffraction (XRD) and Scanning electron microscope (SEM). Methanesulfonate bath is first used in correlative research. We show that addition of different organic additives can strong affect the stress and texture of electrodeposited cupper films. The XRD patterns of copper films reveal the presence of (1 1 1), (2 0 0), (2 2 0), and (3 1 1) peaks, intensity of which is connect with the concentration of the electroplated bath and the organic additives in the plating bath.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87815696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105754
Mengke Zhao, Z. Xia, Yongxin Zhu, Xiaohei Liu, F. Guo
Electromagnetic interference (EMI) is considered as a crucial environmental and reliability issue in electronic information industries, especially with the rapid development of information technology. Since electromagnetic signals are prone to be interfered by external electromagnetic radiation, it is urgent to take effective measures to reduce, or ultimately eliminate the electromagnetic interference. Electromagnetic shielding conductive silicone rubber hence attracts great attention based on such demands. In this paper, we report our fundamental studies on conductive polymer composite materials, i.e., adding different conductive filler into polymer to achieve required conductivity. Conductive polymer composite materials have been widely used in many different areas owing to its low cost and uncomplicated processing techniques. In order to achieve better performance, the two main components, silicone rubber and conductive filler, should both exhibit good performance and compatibility. This paper is focused on the room temperature vulcanized (RTV) silicone rubber. The attempt to improve the performance of silicone rubber was based on the experimental efforts on formula design as well as processing improvement. The formula and processing of RTV silicone rubber with required performances was investigated from a series of comparative experiments. 85°C-85% RH aging, 100°C aging, and salt spray testing (SST) were different ways we employed to investigate the reliability of RTV silicone rubber and conductive silicone rubber. Several aspects of service performance were tested and characterized.
{"title":"Study on reliability of room temperature vulcanization silicone rubber and conductive composite silicone rubber reinforced by silica","authors":"Mengke Zhao, Z. Xia, Yongxin Zhu, Xiaohei Liu, F. Guo","doi":"10.1109/ISAPM.2011.6105754","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105754","url":null,"abstract":"Electromagnetic interference (EMI) is considered as a crucial environmental and reliability issue in electronic information industries, especially with the rapid development of information technology. Since electromagnetic signals are prone to be interfered by external electromagnetic radiation, it is urgent to take effective measures to reduce, or ultimately eliminate the electromagnetic interference. Electromagnetic shielding conductive silicone rubber hence attracts great attention based on such demands. In this paper, we report our fundamental studies on conductive polymer composite materials, i.e., adding different conductive filler into polymer to achieve required conductivity. Conductive polymer composite materials have been widely used in many different areas owing to its low cost and uncomplicated processing techniques. In order to achieve better performance, the two main components, silicone rubber and conductive filler, should both exhibit good performance and compatibility. This paper is focused on the room temperature vulcanized (RTV) silicone rubber. The attempt to improve the performance of silicone rubber was based on the experimental efforts on formula design as well as processing improvement. The formula and processing of RTV silicone rubber with required performances was investigated from a series of comparative experiments. 85°C-85% RH aging, 100°C aging, and salt spray testing (SST) were different ways we employed to investigate the reliability of RTV silicone rubber and conductive silicone rubber. Several aspects of service performance were tested and characterized.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86266604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105666
Xie Wenjun, Cao Yusheng, Yao Quanbin
The Ceramic Ball Grid Array or CBGA package, is a promising choice for high speed digital applications such as CPU, DSP and FPGA. Excellent attributes of this advanced package include miniaturized footprint, good electrical performance and excellent thermal characteristics. This paper is based on CBGA500 package, designed by the package center of Beijing Microelectronics technology institute for CPU, the wideband electrical parameters of one signal path for a typical 500 I/O (1.0 mm pitch) CBGA package structure, were modeled precisely using EM simulation software Ansoft HFSS and ADS of the Agilent company. The simulation result shows the electrical parameter model we got can characterize the selected signal path very well from 0 to 350MHz, and the Scatting parameter difference between the wideband model and the HFSS model is less than 5 percent.
{"title":"Extraction of electrical model for CBGA500","authors":"Xie Wenjun, Cao Yusheng, Yao Quanbin","doi":"10.1109/ISAPM.2011.6105666","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105666","url":null,"abstract":"The Ceramic Ball Grid Array or CBGA package, is a promising choice for high speed digital applications such as CPU, DSP and FPGA. Excellent attributes of this advanced package include miniaturized footprint, good electrical performance and excellent thermal characteristics. This paper is based on CBGA500 package, designed by the package center of Beijing Microelectronics technology institute for CPU, the wideband electrical parameters of one signal path for a typical 500 I/O (1.0 mm pitch) CBGA package structure, were modeled precisely using EM simulation software Ansoft HFSS and ADS of the Agilent company. The simulation result shows the electrical parameter model we got can characterize the selected signal path very well from 0 to 350MHz, and the Scatting parameter difference between the wideband model and the HFSS model is less than 5 percent.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89148513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105744
F. Song, P. Lai
Thermal performance and reliability are necessary to be considered for high-power electronic packaging device design. In this paper, the thermal characteristic of one kind of packaging device was studied using FEM and experimentation, for phase shifter. The model for thermal condition of phase shifter was established. The top junction temperature obtained by simution shows tendency as tested experiment results, verifying the correctness of the simulation model and method used. The relation of relative temperature rising to different substrate thickness and material is studied by simution. The quantitative relations of these parameters and temperature provided a theoretical basis for the thermal design and reliability estimate, the optimization of parameters and the reliability improvement of phase shifter.
{"title":"Effect of substrate material on thermal reliability of high-power electronic packaging device","authors":"F. Song, P. Lai","doi":"10.1109/ISAPM.2011.6105744","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105744","url":null,"abstract":"Thermal performance and reliability are necessary to be considered for high-power electronic packaging device design. In this paper, the thermal characteristic of one kind of packaging device was studied using FEM and experimentation, for phase shifter. The model for thermal condition of phase shifter was established. The top junction temperature obtained by simution shows tendency as tested experiment results, verifying the correctness of the simulation model and method used. The relation of relative temperature rising to different substrate thickness and material is studied by simution. The quantitative relations of these parameters and temperature provided a theoretical basis for the thermal design and reliability estimate, the optimization of parameters and the reliability improvement of phase shifter.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84686538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105699
Liu Yang, Sun Fenglian, Z. Hongwu, Zhou Zhen, Qin Yong
Accidentally drop induced board level intercom-nects break has become one of the most important failure modes for portable electronic products. Board level drop impact test is widely used to evaluate the mechanical shock reliability of electronic assembly interconnects. In this paper, PCB responses during drop impact and vibration shock are compared using strain measurements. The loading similarities and differences of two mechanical shock tests are analyzed. The possibility and limitation of using vibration method for evaluating drop impact reliability are discussed. Results show that vibration test could be a replacement or supplement for drop test for single mode dominating situation. Vibration shock could produce similar loading amplitude and frequency to that of drop impact by adjusting to appropriate vibration parameters,. Compared with drop tests, vibration test provide better repeatability, easier operability. However, loading similarities between two methods only appear at impact locations dominated by single mode. For the locations with different modes superimposition, vibration shock cannot produce desirable loading as drop impact.
{"title":"A comparison of two board level mechanical tests-drop impact and vibration shock","authors":"Liu Yang, Sun Fenglian, Z. Hongwu, Zhou Zhen, Qin Yong","doi":"10.1109/ISAPM.2011.6105699","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105699","url":null,"abstract":"Accidentally drop induced board level intercom-nects break has become one of the most important failure modes for portable electronic products. Board level drop impact test is widely used to evaluate the mechanical shock reliability of electronic assembly interconnects. In this paper, PCB responses during drop impact and vibration shock are compared using strain measurements. The loading similarities and differences of two mechanical shock tests are analyzed. The possibility and limitation of using vibration method for evaluating drop impact reliability are discussed. Results show that vibration test could be a replacement or supplement for drop test for single mode dominating situation. Vibration shock could produce similar loading amplitude and frequency to that of drop impact by adjusting to appropriate vibration parameters,. Compared with drop tests, vibration test provide better repeatability, easier operability. However, loading similarities between two methods only appear at impact locations dominated by single mode. For the locations with different modes superimposition, vibration shock cannot produce desirable loading as drop impact.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87186913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105720
Mingliang L. Huang, Leida Chen, Shaoming Zhou, S. Ye
The different effects of OSP and ENEPIG surface finishes on the electromigration-induced failure mechanism of Sn-3.0Ag-0.5Cu flip chip solder joint were investigated at 150°C under a current density of 1×104 A/cm2. In as-soldered state, the interfacial (Cu0.55Ni0.45)6Sn5 IMC formed on Ni UBM at the chip side in both OSP and ENEPIG joints. However, the EM resistance of the two joints was greatly different when electrons flowed from chip to PCB though they had the same composition of interfacial (Cu, Ni)6Sn5 and the same Ni UBM. For OSP joint, the interfacial (Cu, Ni)6Sn5 and the Ni UBM displayed an excellent EM resistance; and the Cu content of interfacial (Cu, Ni)6Sn5 IMC at the chip side was slightly higher than that of as-reflowed joint. While for ENEPIG joint, the interfacial (Cu, Ni)6Sn5 IMC and Ni UBM were seriously consumed during EM, and the joint failed. The obvious difference of EM-induced failure between the OSP joint and the ENEPIG joint was due to the different effects of surface finishes. Compared with the ENEPIG joint, the OSP joint could offer a Cu source to improve the stability of interfacial (Cu, Ni)6Sn5 IMC, which effectively inhibited the dissolution of Ni during EM.
{"title":"Effect of surface finish (OSP and ENEPIG) on failure mechanism induced by electromigration in Sn-3.0Ag-0.5Cu flip chip solder interconnect","authors":"Mingliang L. Huang, Leida Chen, Shaoming Zhou, S. Ye","doi":"10.1109/ISAPM.2011.6105720","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105720","url":null,"abstract":"The different effects of OSP and ENEPIG surface finishes on the electromigration-induced failure mechanism of Sn-3.0Ag-0.5Cu flip chip solder joint were investigated at 150°C under a current density of 1×10<sup>4</sup> A/cm<sup>2</sup>. In as-soldered state, the interfacial (Cu<inf>0.55</inf>Ni<inf>0.45</inf>)<inf>6</inf>Sn<inf>5</inf> IMC formed on Ni UBM at the chip side in both OSP and ENEPIG joints. However, the EM resistance of the two joints was greatly different when electrons flowed from chip to PCB though they had the same composition of interfacial (Cu, Ni)<inf>6</inf>Sn<inf>5</inf> and the same Ni UBM. For OSP joint, the interfacial (Cu, Ni)<inf>6</inf>Sn<inf>5</inf> and the Ni UBM displayed an excellent EM resistance; and the Cu content of interfacial (Cu, Ni)<inf>6</inf>Sn<inf>5</inf> IMC at the chip side was slightly higher than that of as-reflowed joint. While for ENEPIG joint, the interfacial (Cu, Ni)<inf>6</inf>Sn<inf>5</inf> IMC and Ni UBM were seriously consumed during EM, and the joint failed. The obvious difference of EM-induced failure between the OSP joint and the ENEPIG joint was due to the different effects of surface finishes. Compared with the ENEPIG joint, the OSP joint could offer a Cu source to improve the stability of interfacial (Cu, Ni)<inf>6</inf>Sn<inf>5</inf> IMC, which effectively inhibited the dissolution of Ni during EM.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76883920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105759
F. Calle‐Vallejo, J. M. García‐Lastra
We explore possible routes to tailor the catalytic and electronic properties of graphitic materials through doping. The investigation is carried out by theoretical Density Functional Theory (DFT) and tight-binding calculations. We show that Fe-porphyrin-like sites inserted in graphitic sheets, created after doping are active towards the Oxygen Reduction reaction (ORR). On the other hand, we also show that it is possible to tune the opening of a gap in the band structure of graphene by changing the adsorption periodicity of molecules on its surface.
{"title":"Tailoring the electronic structure of graphene for catalytic and nanoelectronic applications","authors":"F. Calle‐Vallejo, J. M. García‐Lastra","doi":"10.1109/ISAPM.2011.6105759","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105759","url":null,"abstract":"We explore possible routes to tailor the catalytic and electronic properties of graphitic materials through doping. The investigation is carried out by theoretical Density Functional Theory (DFT) and tight-binding calculations. We show that Fe-porphyrin-like sites inserted in graphitic sheets, created after doping are active towards the Oxygen Reduction reaction (ORR). On the other hand, we also show that it is possible to tune the opening of a gap in the band structure of graphene by changing the adsorption periodicity of molecules on its surface.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76206886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-19DOI: 10.1109/ISAPM.2011.6105719
H. Wu, S. Lee
In this study, authors studied and compared the behaviors of the additives in copper sulfate and cupric methanesulfonate electrolytes by means of electrochemical measurement method with a rotary electrode. The electrochemical parameters including exchange current density and cathodic transfer coefficient of the electrolytes were successfully determined utilizing linear sweep voltammetry. Chronoamperometry (CA) was conducted to verify the diffusion time of additives to the surface of electrodes and the corresponding diffusion constants were characterized. Copper plating of 50/200 μm TSVs was achieved with copper sulfate and cupric methanesulfonate electrolytes respectively. The plated surface morphologies were studied using Scanning Electron Microscopy (SEM).
{"title":"A comparison of copper sulfate and methanesulfonate electrolytes in the copper plating process for through silicon via metallization","authors":"H. Wu, S. Lee","doi":"10.1109/ISAPM.2011.6105719","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105719","url":null,"abstract":"In this study, authors studied and compared the behaviors of the additives in copper sulfate and cupric methanesulfonate electrolytes by means of electrochemical measurement method with a rotary electrode. The electrochemical parameters including exchange current density and cathodic transfer coefficient of the electrolytes were successfully determined utilizing linear sweep voltammetry. Chronoamperometry (CA) was conducted to verify the diffusion time of additives to the surface of electrodes and the corresponding diffusion constants were characterized. Copper plating of 50/200 μm TSVs was achieved with copper sulfate and cupric methanesulfonate electrolytes respectively. The plated surface morphologies were studied using Scanning Electron Microscopy (SEM).","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75780256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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