Comparison of graphene nanoribbons with Cu and Al interconnects

Ning Wang, C. English, E. Pop
{"title":"Comparison of graphene nanoribbons with Cu and Al interconnects","authors":"Ning Wang, C. English, E. Pop","doi":"10.1109/DRC.2012.6256995","DOIUrl":null,"url":null,"abstract":"We present a comparative study of graphene nanoribbon (GNR) interconnects (ICs) with sub-50 nm copper (Cu) and aluminum (AI) ICs. We extend existing models for all materials in order to understand the physical size effects that occur when the electron mean free path (AMFP) becomes comparable to the IC dimensions. We calibrate such models against the best publicly available data. We find that, depending on geometrical configuration, either Al or GNRs could hold advantages over Cu at linewidths <;10 nm.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"183 1","pages":"123-124"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"70th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2012.6256995","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

We present a comparative study of graphene nanoribbon (GNR) interconnects (ICs) with sub-50 nm copper (Cu) and aluminum (AI) ICs. We extend existing models for all materials in order to understand the physical size effects that occur when the electron mean free path (AMFP) becomes comparable to the IC dimensions. We calibrate such models against the best publicly available data. We find that, depending on geometrical configuration, either Al or GNRs could hold advantages over Cu at linewidths <;10 nm.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
石墨烯纳米带与铜和铝互连的比较
我们提出了石墨烯纳米带(GNR)互连(ic)与低于50 nm的铜(Cu)和铝(AI) ic的比较研究。我们扩展了所有材料的现有模型,以了解当电子平均自由程(AMFP)与集成电路尺寸相当时发生的物理尺寸效应。我们根据最好的公开数据来校准这些模型。我们发现,根据几何结构的不同,Al或gnr在线宽< 10 nm处都比Cu具有优势。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Enhancement-mode Al045Ga0.55N/Al0.3Ga0.7N High Electron Mobility Transistor with p-Al0.3Ga0.7N Gate CMOS-compatible Ti/Al ohmic contacts (R c ° C) Role of screening, heating, and dielectrics on high-field transport in graphene Electrical control of nuclear-spin-induced Hall voltage in an inverted InAs heterostructure Piezotronics and piezo-phototronics
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1