Yihui Zhang, Pengfei Wu, M. Cui, Zhongyuan Chen, Yinghan Liu, Jinyuan Li
{"title":"Research and Application of Double-sided Thermal Resistance Test Method for Press-pack IGBT","authors":"Yihui Zhang, Pengfei Wu, M. Cui, Zhongyuan Chen, Yinghan Liu, Jinyuan Li","doi":"10.1109/SSLChinaIFWS54608.2021.9675264","DOIUrl":null,"url":null,"abstract":"With the acceleration of energy transformation and the development of power grid equipment technology, the capacity and voltage level of flexible DC transmission project are gradually improved. There is an urgent need for the support of power semiconductor IGBT with higher voltage level and larger capacity. As the press-pack IGBT has two heat dissipation surfaces, and the heat dissipation power of each heat dissipation surface is determined by the proportion of double-sided thermal resistance, the existing test methods cannot determine the heat dissipation power of both sides before obtaining the thermal resistance value. Firstly, this paper summarizes the existing welding and press-pack thermal resistance test methods, analyzes the composition of press-pack IGBT double-sided thermal resistance, puts forward the thermal resistance test method based on the equivalent measurement of press-pack IGBT double-sided heat flux, realizes the synchronous measurement of asymmetric press-pack IGBT double-sided thermal resistance, and studies the influence law of pressure on IGBT thermal resistance characteristics based on the test platform.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"217 1","pages":"235-238"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675264","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
With the acceleration of energy transformation and the development of power grid equipment technology, the capacity and voltage level of flexible DC transmission project are gradually improved. There is an urgent need for the support of power semiconductor IGBT with higher voltage level and larger capacity. As the press-pack IGBT has two heat dissipation surfaces, and the heat dissipation power of each heat dissipation surface is determined by the proportion of double-sided thermal resistance, the existing test methods cannot determine the heat dissipation power of both sides before obtaining the thermal resistance value. Firstly, this paper summarizes the existing welding and press-pack thermal resistance test methods, analyzes the composition of press-pack IGBT double-sided thermal resistance, puts forward the thermal resistance test method based on the equivalent measurement of press-pack IGBT double-sided heat flux, realizes the synchronous measurement of asymmetric press-pack IGBT double-sided thermal resistance, and studies the influence law of pressure on IGBT thermal resistance characteristics based on the test platform.