{"title":"Conduction band-valence band coupling effects on the band structure of In0.28Ga0.72N/GaN Quantum Well","authors":"S. Biswas, I. Mahbub, M. S. Islam","doi":"10.1109/CDE.2013.6481380","DOIUrl":null,"url":null,"abstract":"A quantitative measure of how much the inclusion of the conduction band-valence band coupling effects influence the band structure was obtained. The numerical results of two formalisms were derived using Finite Difference Method (FDM) where one formalism ignores the coupling effects between conduction and valence bands. It was found that the conduction band- valence band coupling effects significantly affects the band structure of typical InGaN Quantum Wells (QW) especially the conduction subbands.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"86 1","pages":"211-214"},"PeriodicalIF":0.0000,"publicationDate":"2013-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Spanish Conference on Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CDE.2013.6481380","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A quantitative measure of how much the inclusion of the conduction band-valence band coupling effects influence the band structure was obtained. The numerical results of two formalisms were derived using Finite Difference Method (FDM) where one formalism ignores the coupling effects between conduction and valence bands. It was found that the conduction band- valence band coupling effects significantly affects the band structure of typical InGaN Quantum Wells (QW) especially the conduction subbands.
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