Session 20 overview: Flash-memory solutions: Memory subcommittee

Abstract

Continued proliferation of semiconductors for a smarter society drives the evolution of flash memory technologies towards higher density, lower power consumption, and lower cost. This year, a new generation of 3D NAND Flash memory with up to 96-stacked word-line layers is introduced. For the first time, a memory with over 1Tb density is demonstrated using a 4b/cell 3D NAND technology. An ultra-low latency flash controller with a new high-speed 3D NAND is proposed in order to fill a large performance gap between DRAM and Flash memories.