Study of Microbands in a Fe-30mn-6.5al-0.3c Low-Density Steel Deformed at Cryogenic Temperature

I. Gutierrez-Urrutia, A. Shibata, K. Tsuzaki
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Abstract

The microband (MB) formation mechanisms in an austenitic Fe-30Mn-6.5Al-0.3C (wt.%) low-density steel tensile deformed at -196°C were investigated by combined electron channeling contrast imaging (ECCI) and electron backscatter diffraction (EBSD). The grain orientation dependences of the MB structure, MB morphology, and MB alignment were quantitatively evaluated in grains oriented with the two main texture components, namely, <111>//tensile axis (TA) and <001>//TA. The interplay between the deformation structure and MB formation was analyzed. Our analysis indicates that the underlying deformation structure controls the MB formation mechanism and, at the current deformation conditions, also determines the crystallographic character of MBs. Most of the evaluated MBs have a crystallographic character (deviation angle <5° from {111} slip plane traces). Specifically, 77% of the MBs in the grains oriented close to <111>//TA directions and all the MBs evaluated in grains oriented close to <001>//TA directions have a crystallographic character. They are associated with a planar strain localization phenomenon occurring along highly-stressed crystallographic slip planes. Non-crystallographic MBs (deviation angle >5° from {111} slip plane traces) only occur in the grains oriented close to <111>//TA directions. They are associated with the splitting of pre-existing dense-dislocation walls (DDWs). At high strain levels, we foresee the activation of a GB-assisted MB formation mechanism associated with twin-GB interactions.
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Fe-30mn-6.5al-0.3c低温变形低密度钢的微带研究
采用电子通道对比成像(ECCI)和电子背散射衍射(EBSD)相结合的方法研究了-196°C拉伸变形奥氏体Fe-30Mn-6.5Al-0.3C (wt.%)低密度钢中微带(MB)的形成机制。在以//拉伸轴(TA)和//TA两种主要织构成分取向的晶粒中,定量评价了MB结构、MB形态和MB排列对晶粒取向的依赖性。分析了变形构造与MB形成的相互作用。我们的分析表明,底层变形结构控制了MB的形成机制,并且在当前变形条件下,也决定了MB的晶体学特征。大多数评价的MBs具有晶体学特征(偏离角//TA方向),所有取向接近//TA方向的MBs都具有晶体学特征。它们与沿高应力晶体滑移面发生的平面应变局部化现象有关。非结晶性MBs(与{111}滑移面轨迹偏离角度>5°)仅发生在靠近//TA方向的晶粒中。它们与先前存在的密集位错壁(ddw)的分裂有关。在高应变水平下,我们预见到与双gb相互作用相关的gb辅助MB形成机制的激活。
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