Yu-Huei Lee, S. Peng, A. C. Wu, Chao-Chang Chiu, Yao-Yi Yang, Ming-Hsin Huang, Ke-Horng Chen, Ying-Hsi Lin, Shih-Wei Wang, Ching-Yuan Yeh, Chen-Chih Huang, Chao-Cheng Lee
{"title":"A 50nA quiescent current asynchronous digital-LDO with PLL-modulated fast-DVS power management in 40nm CMOS for 5.6 times MIPS performance","authors":"Yu-Huei Lee, S. Peng, A. C. Wu, Chao-Chang Chiu, Yao-Yi Yang, Ming-Hsin Huang, Ke-Horng Chen, Ying-Hsi Lin, Shih-Wei Wang, Ching-Yuan Yeh, Chen-Chih Huang, Chao-Cheng Lee","doi":"10.1109/VLSIC.2012.6243848","DOIUrl":null,"url":null,"abstract":"A 50nA quiescent current asynchronous digital-LDO (DLDO) integrated with the PLL-modulated switching regulator (SWR) exhibits the hybrid power management operation. The proposed bidirectional asynchronous wave pipeline (BAWP) in the asynchronous DLDO realizes the Fast-DVS (F-DVS) operation within tens of nano-seconds. The SWR with the leading phase amplifier achieves on-the-fly DVS and 94% peak efficiency, as well as improves 5.6 times MIPS performance through hybrid operation. The fabricated chip occupies 1.04mm2 in 40nm CMOS.","PeriodicalId":6347,"journal":{"name":"2012 Symposium on VLSI Circuits (VLSIC)","volume":"2 1","pages":"178-179"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Symposium on VLSI Circuits (VLSIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2012.6243848","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13
Abstract
A 50nA quiescent current asynchronous digital-LDO (DLDO) integrated with the PLL-modulated switching regulator (SWR) exhibits the hybrid power management operation. The proposed bidirectional asynchronous wave pipeline (BAWP) in the asynchronous DLDO realizes the Fast-DVS (F-DVS) operation within tens of nano-seconds. The SWR with the leading phase amplifier achieves on-the-fly DVS and 94% peak efficiency, as well as improves 5.6 times MIPS performance through hybrid operation. The fabricated chip occupies 1.04mm2 in 40nm CMOS.