{"title":"Two-terminal monolithic InP/InGaAsP tandem solar cells with tunneling intercell ohmic connections","authors":"C.C. Shen, P. Chang, K. A. Emory","doi":"10.1109/ICIPRM.1991.147288","DOIUrl":null,"url":null,"abstract":"The structure, epitaxial growth, and fabrication of a InP-based two-terminal monolithic tandem solar cell are described. The tandem solar cell consists of a p/n InP upper cell and a 0.95 eV p/n InGaAsP lower cell. A InGaAsP tunnel junction acts as the intercell ohmic contacts for the series connection of the two subcells. Evaluation results showing conversion efficiency as high as 14.8% obtained under 1 sun global AM 1.5 conditions are presented.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"32 1","pages":"36-39"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147288","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
The structure, epitaxial growth, and fabrication of a InP-based two-terminal monolithic tandem solar cell are described. The tandem solar cell consists of a p/n InP upper cell and a 0.95 eV p/n InGaAsP lower cell. A InGaAsP tunnel junction acts as the intercell ohmic contacts for the series connection of the two subcells. Evaluation results showing conversion efficiency as high as 14.8% obtained under 1 sun global AM 1.5 conditions are presented.<>