Lanxiang Wang, G. Han, S. Su, Qian Zhou, Yue Yang, P. Guo, Wei Wang, Y. Tong, P. S. Lim, B. Liu, E. Kong, C. Xue, Qiming Wang, B. Cheng, Y. Yeo
{"title":"Thermally Stable Multi-Phase Nickel-Platinum Stanogermanide Contacts for Germanium-Tin Channel MOSFETs","authors":"Lanxiang Wang, G. Han, S. Su, Qian Zhou, Yue Yang, P. Guo, Wei Wang, Y. Tong, P. S. Lim, B. Liu, E. Kong, C. Xue, Qiming Wang, B. Cheng, Y. Yeo","doi":"10.1149/2.014206ESL","DOIUrl":null,"url":null,"abstract":"We demonstrate a novel metal stanogermanide contact metallization process for high mobility germanium-tin (GeSn) channel MOSFETs. The multi-phase nickel-platinum stanogermanide [Ni(GeSn)+Ptx(GeSn)y] contacts are formed by reacting Ni-Pt alloy with Ge0.947Sn0.053 alloy, which is epitaxially grown on Ge (100) substrate by solid source molecular beam epitaxy (MBE). Compared with nickel stanogermanide [Ni(GeSn)] contacts, the Pt-incorporated contacts, i.e. [Ni(GeSn)+Ptx(GeSn)y], exhibit enhanced thermal stability in a wide range of formation temperatures and have superior surface morphology even after thermal processing. The proposed contacts are attractive for the integration in high mobility GeSn MOSFETs.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"140 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrochemical and Solid State Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2.014206ESL","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 21
Abstract
We demonstrate a novel metal stanogermanide contact metallization process for high mobility germanium-tin (GeSn) channel MOSFETs. The multi-phase nickel-platinum stanogermanide [Ni(GeSn)+Ptx(GeSn)y] contacts are formed by reacting Ni-Pt alloy with Ge0.947Sn0.053 alloy, which is epitaxially grown on Ge (100) substrate by solid source molecular beam epitaxy (MBE). Compared with nickel stanogermanide [Ni(GeSn)] contacts, the Pt-incorporated contacts, i.e. [Ni(GeSn)+Ptx(GeSn)y], exhibit enhanced thermal stability in a wide range of formation temperatures and have superior surface morphology even after thermal processing. The proposed contacts are attractive for the integration in high mobility GeSn MOSFETs.
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