Atomic vapor deposition of bismuth titanate thin films

Nitin Deepak, Panfeng F. Zhang, L. Keeney, M. Pemble, R. Whatmore
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引用次数: 18

Abstract

C-axis oriented ferroelectric bismuth titanate (Bi4Ti3O12) thin films were grown on (001) strontium titanate (SrTiO3) substrates by atomic vapour deposition technique. Ferroelectric properties of thin films are greatly affected by the presence of various kinds of defects. Detailed x-ray diffraction data (XRD) and transmission electron microscopy (TEM) analysis showed presence of out-of-phase boundaries (OPBs). These OPBs originate at atomic steps on the SrTiO3 substrate surface. It is found that the OPB density changes appreciably with the amount of titanium injected during growth of the thin films.
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钛酸铋薄膜的原子气相沉积
采用原子气相沉积技术在(001)钛酸锶(SrTiO3)衬底上生长了c轴取向钛酸铋(Bi4Ti3O12)铁电薄膜。各种缺陷的存在对薄膜的铁电性能有很大的影响。详细的x射线衍射(XRD)和透射电子显微镜(TEM)分析表明存在相外边界(OPBs)。这些opb起源于SrTiO3衬底表面的原子步骤。在薄膜生长过程中,随着钛的注入量的增加,OPB的密度发生了明显的变化。
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