S. Yin, G. Le Rhun, E. Defay, B. Vilquin, G. Niu, Y. Robach, C. Drăgoi, L. Trupina, L. Pintilie
{"title":"Pizeoelectric epitaxial sol-gel Pb(Zr0.52Ti0.48)O3 film on Si(001)","authors":"S. Yin, G. Le Rhun, E. Defay, B. Vilquin, G. Niu, Y. Robach, C. Drăgoi, L. Trupina, L. Pintilie","doi":"10.1109/ISAF.2012.6297812","DOIUrl":null,"url":null,"abstract":"Epitaxial Pb(Zr0.52Ti0.48)O3 (PZT) thin film has been successfully integrated on Si(001) substrate by sol-gel method. SrTiO3 (STO) layer deposited on Si by Molecular Beam Epitaxy (MBE) acts as a template layer in this study to avoid the formation of amorphous SiO2, and allows the chemical compatibility for further epitaxial growth. For bottom electrode, SrRuO3 (SRO) layer grown by Pulsed Laser Deposition (PLD) on STO/Si was used. Epitaxial single crystalline growth of PZT film after Rapid Thermal Annealing (RTA) at 650°C was evidenced by X-Ray Diffraction (XRD). The following relationship in the heterostructure was deduced: [110] PZT (001) // [110] SRO (001) // [110] STO (001) // [100] Si (001). A clear piezoelectric response of the film was observed by Piezoresponse Force Microscope (PFM). Moreover, the structural STO quality was proved to have a major impact on the electrical properties of PZT films.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"434 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of ISAF-ECAPD-PFM 2012","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2012.6297812","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Epitaxial Pb(Zr0.52Ti0.48)O3 (PZT) thin film has been successfully integrated on Si(001) substrate by sol-gel method. SrTiO3 (STO) layer deposited on Si by Molecular Beam Epitaxy (MBE) acts as a template layer in this study to avoid the formation of amorphous SiO2, and allows the chemical compatibility for further epitaxial growth. For bottom electrode, SrRuO3 (SRO) layer grown by Pulsed Laser Deposition (PLD) on STO/Si was used. Epitaxial single crystalline growth of PZT film after Rapid Thermal Annealing (RTA) at 650°C was evidenced by X-Ray Diffraction (XRD). The following relationship in the heterostructure was deduced: [110] PZT (001) // [110] SRO (001) // [110] STO (001) // [100] Si (001). A clear piezoelectric response of the film was observed by Piezoresponse Force Microscope (PFM). Moreover, the structural STO quality was proved to have a major impact on the electrical properties of PZT films.
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