M. Kondow, T. Kitatani, M. Aoki, S. Nakatsuka, M. Kudo
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引用次数: 2
Abstract
We found that additional RTA at around 750 C greatly increases the photoluminescence (PL) intensity of solid-source MBE grown GaInNAs, while a relatively low in-situ annealing temperature, i.e., growth temperature for the p-Al/sub 0.3/Ga/sub 0.7/As cladding layer, at around 600 C is enough to improve the crystallinity of GaInNAs if additional RTA is performed. Consequently, a 10-Gb/s operation of a GaInNAs edge-emitting laser was achieved above 70 C.
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