Information extraction from Murphy–Good plots of tungsten field electron emitters

Mazen A. Madanat, Mohammad Al Share, Mohammad M. Allaham, M. Mousa
{"title":"Information extraction from Murphy–Good plots of tungsten field electron emitters","authors":"Mazen A. Madanat, Mohammad Al Share, Mohammad M. Allaham, M. Mousa","doi":"10.1116/6.0000803","DOIUrl":null,"url":null,"abstract":"This study introduces an easy methodology to test and analyze experimental field electron emission current-voltage data from metallic single-tip emitters; this novel and easy methodology is called the Murphy–Good plots. Tungsten electron emitters were used as an example and were prepared by the electrochemical etching process. The current-voltage characteristics are obtained in high vacuum levels and using a traditional field emission microscope. Murphy–Good plots are used to apply the well-known field electron emission orthodoxy test to the experimental data and then to extract the emitters’ characterization parameters if the test is passed. The novelty in using this type of plots lies in its independency on any correction factors, unlike the traditional Fowler–Nordheim and Millikan–Lauritsen plots, in addition to its simple theoretical form. The results are calculated using a simple web tool that applies the field electron emission orthodoxy test to any type of the current-voltage analysis plots and then to extract the characterization parameters of the emitters.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0000803","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

This study introduces an easy methodology to test and analyze experimental field electron emission current-voltage data from metallic single-tip emitters; this novel and easy methodology is called the Murphy–Good plots. Tungsten electron emitters were used as an example and were prepared by the electrochemical etching process. The current-voltage characteristics are obtained in high vacuum levels and using a traditional field emission microscope. Murphy–Good plots are used to apply the well-known field electron emission orthodoxy test to the experimental data and then to extract the emitters’ characterization parameters if the test is passed. The novelty in using this type of plots lies in its independency on any correction factors, unlike the traditional Fowler–Nordheim and Millikan–Lauritsen plots, in addition to its simple theoretical form. The results are calculated using a simple web tool that applies the field electron emission orthodoxy test to any type of the current-voltage analysis plots and then to extract the characterization parameters of the emitters.
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钨场电子发射体墨菲-古德曲线的信息提取
本文介绍了一种简单的方法来测试和分析来自金属单尖端发射器的实验场电子发射电流-电压数据;这种新颖而简单的方法被称为墨菲-古德图。以钨基电子发射体为例,采用电化学刻蚀法制备了钨基电子发射体。利用传统的场发射显微镜在高真空条件下获得了电流-电压特性。采用Murphy-Good图对实验数据进行著名的场电子发射正统检验,如果检验通过,则提取发射体的表征参数。与传统的Fowler-Nordheim和Millikan-Lauritsen方法不同,这种方法的新颖之处在于它不依赖任何校正因子,而且理论形式简单。使用简单的web工具计算结果,该工具将场电子发射正统性测试应用于任何类型的电流-电压分析图,然后提取发射器的表征参数。
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