{"title":"The prospects and challenges in junction process technology for advanced semiconductor devices","authors":"K. Suguro","doi":"10.1109/IIT.2014.6939767","DOIUrl":null,"url":null,"abstract":"Historical background of ion implantation technology in semiconductor devices is reviewed in conjunction with electrical activation of impurity atoms, annealing of primary defects introduced during ion implantation as well as the diffusion of impurity atoms. Next the prospects and challenges in junction process technology for advanced semiconductor devices are discussed.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"22 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 20th International Conference on Ion Implantation Technology (IIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIT.2014.6939767","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Historical background of ion implantation technology in semiconductor devices is reviewed in conjunction with electrical activation of impurity atoms, annealing of primary defects introduced during ion implantation as well as the diffusion of impurity atoms. Next the prospects and challenges in junction process technology for advanced semiconductor devices are discussed.
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