Xuan-Thuan Nguyen, Trong-Thuc Hoang, Hong-Thu Nguyen, Katsumi Inoue, C. Pham
{"title":"A 219-μW 1D-to-2D-Based Priority Encoder on 65-nm SOTB CMOS","authors":"Xuan-Thuan Nguyen, Trong-Thuc Hoang, Hong-Thu Nguyen, Katsumi Inoue, C. Pham","doi":"10.1109/ISCAS.2018.8351406","DOIUrl":null,"url":null,"abstract":"Priority encoder (PE) is recognized as an indispensable component in the content-addressable memory. In this paper, two efficient architecture of 64-bit PE and 256-bit PE using 1D-array to 2D-array conversion (1D-to-2D) method are presented and implemented in a 65-nm Silicon-on-thin-buried-oxide (SOTB) CMOS process. The 1D-to-2D method is exploited because of its advantages in large-sized PE construction. The SOTB CMOS process is utilized because of its prominent advantages of low-power and high-performance configuration using back bias voltages. The measurement results at 1.2 V showed that a fabricated PE256 chip was fully operational at 45 MHz and consumed approximately 219 μW. Additionally, in sleep mode, the leakage power dropped as low as 0.34 μW at 0.6 V.","PeriodicalId":6569,"journal":{"name":"2018 IEEE International Symposium on Circuits and Systems (ISCAS)","volume":"42 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on Circuits and Systems (ISCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCAS.2018.8351406","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Priority encoder (PE) is recognized as an indispensable component in the content-addressable memory. In this paper, two efficient architecture of 64-bit PE and 256-bit PE using 1D-array to 2D-array conversion (1D-to-2D) method are presented and implemented in a 65-nm Silicon-on-thin-buried-oxide (SOTB) CMOS process. The 1D-to-2D method is exploited because of its advantages in large-sized PE construction. The SOTB CMOS process is utilized because of its prominent advantages of low-power and high-performance configuration using back bias voltages. The measurement results at 1.2 V showed that a fabricated PE256 chip was fully operational at 45 MHz and consumed approximately 219 μW. Additionally, in sleep mode, the leakage power dropped as low as 0.34 μW at 0.6 V.