Particle Improvement for Low-K Process in Diffusion Furnace

Abstract

In semiconductor fabrication, diffusion process plays a critical role, ranging from Oxidation, Low Pressure Chemical Vapor Deposition (LPCVD), Thermal Processing, Plasma Processing, Atomic Layer Deposition (ALD) and Epitaxial Si. Diffusion Low-k application, one of the six diffusion process categories, is an Atomic Layer Deposition process (ALD) to create a spacer. The spacer provides various applications in the transistor fabrication process. Its low k value reduces capacitance between the gate and contact. However, the process is notorious for particle defects. This paper is intended to explore ways to improve particle performance which, in turn, optimizes its above mentioned functions. It covers a design of experiment (DOE) to manipulate gas flows in order to achieve its desired results. The paper, however, does not seek to introduce new hardware to the current furnace configurations.