{"title":"Construction and operation of sub-10 nm vertical molecular transistors","authors":"E. Mentovich, S. Richter","doi":"10.1109/INEC.2010.5424686","DOIUrl":null,"url":null,"abstract":"We present a novel type of nano device: the sub-10 nm vertical molecular transistor. This device can be fabricated using conventional lithographic methods and in mass production. We use this transistor to explore the transport mechanism of various molecular systems such molecular quantum dots and doped proteins","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"39 1","pages":"646-647"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 3rd International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2010.5424686","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
We present a novel type of nano device: the sub-10 nm vertical molecular transistor. This device can be fabricated using conventional lithographic methods and in mass production. We use this transistor to explore the transport mechanism of various molecular systems such molecular quantum dots and doped proteins
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