Bo He, Q. Zhong, Xu Jing, Lei Zhao, Feng Li, Cheng Shen, N. Zhang, ZhengShan Yu, Yanting Yin
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引用次数: 2
Abstract
A novel ITO/SiO2/np Silicon SINP violet and blue enhanced photovoltaic device has been fabricated by thermal diffusion of phosphorus for shallow junction to enhance the spectral responsivity within the wavelength range of 400-600nm, low temperature thermally grown an ultrathin silicon dioxide and RF sputtering ITO antireflection coating to reduce the reflected light and enhance the sensitivity. The current-voltage (I-V) characteristics, spectral response and responsivity of high quantum efficiency of violet SINP photovoltaic device and deep junction SINP photovoltaic device were calculated and analyzed in detail. Keywords— ITO; SINP photovoltaic device; current-voltage(I-V) characteristics; spectral response; responsivity
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